参数资料
| 型号： | NP0900SBT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | IC THY SURGE PROTECTOR 85V SMB |
| 产品变化通告： | TSPD Discontinuation 10/Jul/2012 |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 98V |
| 电压 - 断路： | 75V |
| 电压 - 导通状态： | 4V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 80A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 122pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
| 其它名称： | NPO900SBT3G |
NP Series
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristics (Note 1)
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both Polarities)
Off ? State Voltage (Both Polarities)
Off State Current
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
( V D1 = 50 V ) Both Polarities
( V D2 = V DRM ) Both Polarities
V (BO)
V DRM
I DRM1
I DRM2
58
65
75
90
120
140
170
180
190
220
275
320
77
88
98
130
160
180
220
240
260
300
350
400
2.0
5.0
V
V
m A
m A
Holding Current (Both Polarities) (Note 4) V S = 500 V; I T = 2.2 A
On ? State Voltage I T = 1.0 A(pk) (PW = 300 m Sec, DC = 2%)
Maximum Non ? Repetitive Rate of Change of On ? State Current (Note 1)
(Haefely test method, 1.0 pk < 100 A)
Critical Rate of Rise of Off ? State Voltage
(Linear Waveform, V D = 0.8 V DRM , T J = 25 ° C)
I H
V T
di/dt
dv/dt
150
?
?
5.0
250
?
?
?
?
4.0
500
?
mA
V
A/ m Sec
kV/ m Sec
CAPACITANCE
Typ
Characteristics
Symbol
A
B
C
Unit
(f=1.0 MHz, 1.0 V rms , 2 Vdc bias)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
C o
84
79
65
58
46
44
39
37
36
33
31
28
129
123
122
95
75
70
59
59
56
52
47
44
222
198
122
154
120
113
99
97
56
81
76
71
pF
1.
2.
3.
4.
Electrical parameters are based on pulsed test methods.
di/dt must not be exceeded of a maximum of 100 A/ m Sec in this application.
Measured under pulsed conditions to reduce heating
Allow cooling before testing second polarity.
http://onsemi.com
2
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