参数资料
型号: NP1300SDMCT3G
厂商: ON SEMICONDUCTOR
元件分类: 浪涌电流限制器
英文描述: 160 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
封装: ROHS COMPLIANT, CASE 403C-01, SMB, 2 PIN
文件页数: 4/6页
文件大小: 129K
代理商: NP1300SDMCT3G
NPSDMC Series
http://onsemi.com
4
The electrical characteristics of the TSPD help the user to
define the protection threshold for the circuit. During the
open circuit condition the device must remain transparent;
this is defined by the IDRM. The IDRM should be as low as
possible. The typical value is less than 5
mA.
The circuit operating voltage and protection voltage must
be understood and considered during circuit design. The
V(BO) is the guaranteed maximum voltage that the protected
circuit will see, this is also known as the protection voltage.
The VDRM is the guaranteed maximum voltage that will
keep the TSPD in its normal open circuit state. The TSPD
V(BO) is typically a 2030% higher than the VDRM. Based
on these characteristics it is critical to choose devices which
have a VDRM higher than the normal circuit operating
voltage, and a V(BO) which is less than the failure threshold
of the protected equipment circuit. A low onstate voltage
Vt allows the TSPD to conduct large amounts of surge
current (500 A) in a small package size.
Once a transient surge has passed and the operating
voltage and currents have dropped to their normal level the
TSPD changes back to its open circuit state.
Normal System
Operating Voltage
Equipment Failure Threshold
Time
Transient Surge
TSPD Protection
(short)
Figure 5. Protection During a Transient Surge
TSPD Transparent
(open)
TSPD Transparent
(open)
V
olts
TSPD Protection Voltage
Upper Limit
TSPD’s are useful in helping designers meet safety and
regulatory standards in Telecom equipment including
GR1089CORE,ITUK.20, ITUK.21, ITUK.45, FCC
Part 68, UL1950, and EN 60950.
ON Semiconductor offers a full range of these products in
the NP series product line.
DEVICE SELECTION
When selecting a TSPD use the following key selection
parameters.
OffState Voltage VDRM
Choose a TSPD that has an OffState Voltage greater than
the normal system operating voltage. The protector should
not operate under these conditions:
Example:
Vbat = 48 Vmax
Vring = 150 Vrms = 150*1.414 = 212 V peak
VDRM should be greater than the peak value of these two
components:
VDRM > 212 + 48 = 260 VDRM
Breakover Voltage V(BO)
Verify that the TSPD Breakover Voltage is a value less
than the peak voltage rating of the circuit it is protecting.
Example: Relay breakdown voltage, SLIC maximum
voltage, or coupling capacitor maximum rated voltage.
Peak Pulse Current Ipps
Choose a Peak Pulse current value which will exceed the
anticipated surge currents in testing.
Hold Current (IH)
The Hold Current must be greater than the maximum
system generated current. If it is not then the TSPD will
remain in a shorted condition, even after a transient event
has passed.
相关PDF资料
PDF描述
NP1500SDMCT3G 180 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
NP1800SDMCT3G 220 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
NPD1505 15 A, 50 V, SILICON, RECTIFIER DIODE
NPI31W150MTRF INDUCTOR, 15UH, 3.1A, 0.05OHM, SMT
NPI31W100MTRF 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD
相关代理商/技术参数
参数描述
NP13-100-18 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC
NP1326 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) DEC 1) BLNK, BR
NP1326AL 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1)DEC, 1)BLNK., AL
NP1326BK 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) DEC 1) BLNK, BK
NP1326GY 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) DEC 1) BLNK, GY