参数资料
| 型号： | NP1500SCMCT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | IC TSPD LOW CAP 100A 160V SMB |
| 产品变化通告： | Product Discontinuation 19/Jul/2012 |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 180V |
| 电压 - 断路： | 140V |
| 电压 - 导通状态： | 4V |
| 电流 - 峰值脉冲(8 x 20µs)： | 400A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 100A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 33pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
NPMC Series
Ultra Low Capacitance
TSPD
The NPMC series of Low Capacitance Thyristor Surge Protection
Devices (TSPD) protect sensitive electronic equipment from transient
overvoltage conditions. Due to their ultra low off ? state capacitance
(C o ), they offer minimal signal distortion for high speed equipment
such as DSL and T1/E1 circuits. The low nominal offstate capacitance
translates into the extremely low differential capacitance offering
superb linearity with applied voltage or frequency.
The NPMC Series helps designers to comply with the various
regulatory standards and recommendations including:
GR ? 1089 ? CORE, IEC 61000 ? 4 ? 5, ITU K.20/K.21/K.45, IEC 60950,
TIA ? 968 ? A, FCC Part 68, EN 60950, UL 1950.
http://onsemi.com
ULTRA LOW CAPACITANCE
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64 ? 350 VOLTS
Features
? Ultra Low ? Micro Capacitance
? Low Leakage (Transparent)
? High Surge Current Capabilities
? Precise Turn on Voltages
? Low Voltage Overshoot
? These are Pb ? Free Devices
Typical Applications
? xDSL Central Office and Customer Premise
? T1/E1
? Other Broadband High Speed Data Transmission Equipment
ELECTRICAL PARAMETERS
T
SMB
JEDEC DO ? 214AA
CASE 403C
MARKING DIAGRAM
R
V DRM
V (BO)
V T
I DRM
I (BO)
I T
I H
Device
NP0640SxMCT3G
V
58
V
77
V
4
m A
5
mA
800
A
2.2
mA
150
AYWW
xxxxM G
G
NP0720SxMCT3G
NP0900SxMCT3G
NP1100SxMCT3G
65
75
90
88
98
130
4
4
4
5
5
5
800
800
800
2.2
2.2
2.2
150
150
150
A
Y
WW
xxxx
= Assembly Location
= Year
= Work Week
= Specific Device Code
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
120
140
170
180
160
180
220
240
4
4
4
4
5
5
5
5
800
800
800
800
2.2
2.2
2.2
2.2
150
150
150
150
(NPxxx0SxMC)
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
190
220
275
260
300
350
4
4
4
5
5
5
800
800
800
2.2
2.2
2.2
150
150
150
Device
NPxxx0SxMCT3G
Package
SMB
(Pb ? Free)
Shipping ?
2500 Tape &
Reel
*
NP3500SxMCT3G 320 400
G = indicates leadfree, RoHS compliant
Recognized Components
4
5
800
2.2
150
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2010
December, 2010 ? Rev. 2
1
Publication Order Number:
NP0640SAMC/D
相关PDF资料 |
PDF描述 |
|---|---|
| NP1300SCMCT3G | IC TSPD LOW CAP 100A 140V SMB |
| NP1100SCMCT3G | IC TSPD LOW CAP 100A 110V SMB |
| NP0900SCMCT3G | IC TSPD LOW CAP 100A 87V SMB |
| NP2600SBT3G | IC THY SURGE PROTECTOR 260V SMB |
| NP0720SCMCT3G | IC TSPD LOW CAP 100A 72V SMB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP1500SCT3G | 功能描述:硅对称二端开关元件 100A 150V TSPD SMB RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| NP1500SDMCT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Current TSPD |
| NP1500U | 制造商:ORION POWER SYSTEMS, INC. 功能描述:UPS; Network Pro 1500 Line Interactive; Rated at 1500 VA and 1300 Watts |
| NP15P04SLG-E1-AY | 功能描述:MOSFET P-CH -40V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP15P06SLG-E1-AY | 功能描述:MOSFET P-CH -60V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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