参数资料
| 型号： | NP2100SBT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | IC THY SURGE PROTECTOR 210V SMB |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 240V |
| 电压 - 断路： | 180V |
| 电压 - 导通状态： | 4V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 80A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 59pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
NP Series
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional
NP Series Thyristor Surge Protector Devices (TSPD) protect
telecommunication circuits such as central office, access, and
customer premises equipment from overvoltage conditions. These are
bidirectional devices so they are able to have functionality of 2 devices
in one package, saving valuable space on board layout.
These devices will act as a crowbar when overvoltage occurs and will
divert the energy away from circuit or device that is being protected.
Use of the NP Series in equipment will help meet various regulatory
requirements including: GR ? 1089 ? CORE, IEC 61000 ? 4 ? 5, ITU
K.20/21/45, IEC 60950, TIA ? 968 ? A, FCC Part 68, EN 60950,
UL 1950.
http://onsemi.com
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64 ? 350 VOLTS
ELECTRICAL PARAMETERS
MT1
MT2
V DRM
V (BO)
V T
I DRM
I (BO)
I T
I H
Device
NP0640SxT3G
NP0720SxT3G
V
58
65
V
77
88
V
4
4
m A
5
5
mA
800
800
A
2.2
2.2
mA
150
150
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
75
90
120
140
170
180
190
220
275
320
98
130
160
180
220
240
260
300
350
400
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
800
800
800
800
800
800
800
800
800
800
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
150
150
150
150
150
150
150
150
150
150
SMB
JEDEC DO ? 214AA
CASE 403C
MARKING DIAGRAM
AYWW
xxxx G
G
xxxx = Specific Device Code
Y = Year
WW = Work Week
G = indicates leadfree, RoHS compliant
SURGE DATA RATINGS
G = Pb ? Free Package
(Note: Microdot may be in either location)
Waveform
x = series ratings
ORDERING INFORMATION
Specification
GR ? 1089 ? CORE
TIA ? 968 ? A
GR ? 1089 ? CORE
TIA ? 968 ? A
ITU ? T K.20/21
GR ? 1089 ? CORE
Voltage
m s
2x10
10x160
10x360
10x560
10x700
10x1000
Current
m s
2x10
10x160
10x360
10x560
5x310
10x1000
A
150
90
75
50
75
50
B
250
150
125
100
100
80
C
500
200
175
150
200
100
Unit
A(pk)
Preferred devices are recommended choices for future use
and best overall value.
*
Recognized Components
? Semiconductor Components Industries, LLC, 2008
May, 2008 ? Rev. 5
1
Publication Order Number:
NP0640S/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP2100SCMCT3G | 功能描述:硅对称二端开关元件 LOW CAP TSPD SURGE DEVICE RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| NP2100SCT3G | 功能描述:硅对称二端开关元件 100A 210V TSPD SMB RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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