参数资料
| 型号： | NP2300SBMCT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | IC TSPD SURGE DEVICE 80A SMB |
| 产品变化通告： | Product Discontinuation 19/Jul/2012 |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 260V |
| 电压 - 断路： | 190V |
| 电压 - 导通状态： | 4V |
| 电流 - 峰值脉冲(8 x 20µs)： | 250A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 80A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 29pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
NPMC Series
ELECTRICAL CHARACTERISTICS TABLE (T A = 25 ° C unless otherwise noted)
Symbol
V (BO)
Rating
Breakover voltage: The maximum voltage across the device in or at the
breakdown region. (Note 4)
VDC = 1000 V, dv/dt = 100 V/ m s
NP0640SxMCT3G
NP0720SxMCT3G
Min
Typ
Max
± 77
± 88
Unit
V
NP0900SxMCT3G
NP1100SxMCT3G
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
NP3500SxMCT3G
± 98
± 130
± 160
± 180
± 220
± 240
± 260
± 300
± 350
± 400
I (BO)
I H
Breakover Current: The instantaneous current flowing at the breakover voltage.
Holding Current: Minimum current required to maintain the device in the on ? state. (Notes 5, 6)
150
800
mA
mA
I DRM
Off ? state Current: The dc value of current that results from the applica-
tion of the off ? state voltage
V D = 50 V
V D = V DRM
2
5
m A
V T
di/dt
On ? state Voltage: The voltage across the device in the on ? state condition.
I T = 2.2 A (pk), PW = 300 m s, DC = 2%
Critical rate of rise of on ? state current: rated value of the rate of rise of current which the device
can withstand without damage.
4
± 500
V
A/ m s
4. Electrical parameters are based on pulsed test methods.
5. Measured under pulsed conditions to reduce heating
6. Allow cooling before testing second polarity.
THERMAL CHARACTERISTICS
Symbol
T STG
T J
R 0JA
Rating
Storage Temperature Range
Junction Temperature
Thermal Resistance: Junction ? to ? Ambient Per EIA/JESD51 ? 3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
Value
? 65 to +150
? 40 to +150
90
Unit
° C
° C
° C/W
http://onsemi.com
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP2300SBT3G | 功能描述:硅对称二端开关元件 80A 230V TSPD SMB RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| NP2300SCMCT3G | 功能描述:硅对称二端开关元件 LOW CAP TSPD SURGE DEVICE RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| NP2300SCT3G | 功能描述:硅对称二端开关元件 100A 230V TSPD SMB RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| NP236-102002-1 | 制造商:YAMAICHI 制造商全称:Yamaichi Electronics Co., Ltd. 功能描述:Pin Grid Array /Zero Insertion Force (PGA/ZIF - Interstitial) |
| NP236-102002-2 | 制造商:YAMAICHI 制造商全称:Yamaichi Electronics Co., Ltd. 功能描述:Pin Grid Array /Zero Insertion Force (PGA/ZIF - Interstitial) |
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