参数资料
型号: NP50P06SDG-E1-AY
厂商: Renesas Electronics America
文件页数: 3/9页
文件大小: 0K
描述: MOSFET P-CH -60V 50A TO-252
标准包装: 2,500
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 50A
开态Rds(最大)@ Id, Vgs @ 25° C: 16.5 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 100nC @ 10V
输入电容 (Ciss) @ Vds: 5000pF @ 10V
功率 - 最大: 1.2W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252(MP-3ZK)
包装: 带卷 (TR)

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP50P06SDG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP50P06SDG-E1-AY
Note
LEAD PLATING
PACKING
PACKAGE
NP50P06SDG-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
? Super low on-state resistance
R DS(on)1 = 16.5 m Ω MAX. (V GS = ? 10 V, I D = ? 25 A)
R DS(on)2 = 23.0 m Ω MAX. (V GS = ? 4.5 V, I D = ? 25 A)
? Low input capacitance
C iss = 5000 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-252)
Drain Current (pulse)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
Note1
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
V DSS
V GSS
I D(DC)
I D(pulse)
P T1
P T2
T ch
T stg
? 60
m 20
m 50
m 150
84
1.2
175
? 55 to + 175
V
V
A
A
W
W
° C
° C
Single Avalanche Current
Note2
I AS
32
A
<R>
Single Avalanche Energy
Note2
E AS
102
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25 ° C, V DD = ? 30 V, R G = 25 Ω , V GS = ? 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.78
125
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19073EJ2V0DS00 (2nd edition)
Date Published March 2008 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
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