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参数资料
| 型号： | NP52N055SUG-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 52A TO-252 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 52A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 26A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 57nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3200pF @ 25V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252（MP-3ZK） |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP52N055SUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The NP52N055SUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
? Channel temperature 175 degree rating
? Super low on-state resistance
R DS(on) = 14 m ? MAX. (V GS = 10 V, I D = 26 A)
? Low C iss : C iss = 2100 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
PART NUMBER
NP52N055SUG
PACKAGE
TO-252 (MP-3ZK)
(TO-252)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
55
±20
±52
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
±170
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
56
1.2
175
? 55 to +175
W
W
° C
° C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I AR
E AR
21
44
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch ≤ 150 ° C, V DD = 28 V, R G = 25 ? , V GS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
2.68
125
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16865EJ2V0DS00 (2nd edition)
Date Published January 2005 NS CP(K)
The mark
shows major revised points.
Printed in Japan
2004
相关PDF资料 |
PDF描述 |
|---|---|
| NP52N06SLG-E1-AY | MOSFET N-CH 60V 52A T0-252 |
| NP55N03SUG-E1-AY | MOSFET N-CH 30V 55A TO-252 |
| NP55N055SDG-E1-AY | MOSFET N-CH 55V 55A TO-252 |
| NP55N055SUG-E1-AY | MOSFET N-CH 55V 55A TO-252 |
| NP60N03KUG-E1-AY | MOSFET N-CH 30V 60A TO-263 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP52N055SUG-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:NP52N055SUG Series N-Channel 55 V 14 mOhm 38 nC Switching MosFet - TO-252 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,55V/52A |
| NP52N06SLG-AY | 制造商:Renesas Electronics Corporation 功能描述: |
| NP52N06SLG-E1-AY | 功能描述:MOSFET N-CH 60V 52A T0-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP5400BA1C | 制造商:MMC 功能描述: |
| NP5400-BA1C | 制造商:AppliedMicro 功能描述: |
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