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参数资料
| 型号： | NP80N04NLG-S18-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 80A TO-262 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.8 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 135nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6900pF @ 25V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
NP80N04MLG, NP80N04NLG, NP80N04PLG
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
SYMBOL
I DSS
I GSS
V GS(th)
TEST CONDITIONS
V DS = 40 V, V GS = 0 V
V GS = ± 20 V, V DS = 0 V
V DS = V GS , I D = 250 μ A
MIN.
1.4
TYP.
MAX.
1
± 10
2.5
UNIT
μ A
μ A
V
Forward Transfer Admittance
Note
| y fs |
V DS = 5 V, I D = 35 A
25
64
S
Drain to Source On-state Resistance
Note
R DS(on)1
V GS = 10 V, I D = 40 A
3.8
4.8
m Ω
NP80N04MLG, NP80N04NLG
V GS = 10 V, I D = 40 A
3.3
4.5
m Ω
NP80N04PLG
R DS(on)2
V GS = 4.5 V, I D = 35 A
4.9
9.0
m Ω
NP80N04MLG, NP80N04NLG
V GS = 4.5 V, I D = 35 A
4.6
8.7
m Ω
NP80N04PLG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q G
Q GS
Q GD
V DS = 25 V,
V GS = 0 V,
f = 1 MHz
V DD = 20 V, I D = 40 A,
V GS = 10 V,
R G = 0 Ω
V DD = 32 V,
V GS = 10 V,
I D = 80 A
4600
480
310
17
18
74
8
90
13
26
6900
720
560
37
45
148
20
135
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = 80 A, V GS = 0 V
I F = 80 A, V GS = 0 V,
di/dt = 100 A/ μ s
0.95
39
39
1.5
V
ns
nC
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
PG.
D.U.T.
R G = 25 Ω
50 Ω
L
V DD
PG.
D.U.T.
R G
R L
V DD
V GS
Wave Form
V GS
0
10%
V GS
90%
V GS = 20 → 0 V
V DS
90%
90%
V DD
I D
I AS
BV DSS
V DS
V GS
0
τ
V DS
Wave Form
V DS
0
t d(on)
10%
t r
10%
t d(off)
t f
Starting T ch
τ = 1 μ s
Duty Cycle ≤ 1%
t on
t off
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
PG.
50 Ω
V DD
Data Sheet D19797EJ1V0DS
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP80N04NUG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N04NUG-S18-AY | 功能描述:MOSFET N-CH 40V 80A TO-262 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP80N04PDG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N04PDG-E1B-AY | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 80A T/R 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET, NCH, 40V, TO263ZP - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 80A MP-25K |
| NP80N04PDG-E2B-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
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