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参数资料
| 型号： | NP82N055DLE-S12-AY |
| 厂商： | NEC Corp. |
| 元件分类： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS场效应晶体管的开关N沟道功率场效应晶体管 |
| 文件页数： | 3/10页 |
| 文件大小： | 223K |
| 代理商： | NP82N055DLE-S12-AY |
Data Sheet D14098EJ6V0DS
3
NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NLE
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
10
μ
A
Gate to Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 41 A
24
50
S
R
DS(on)1
V
GS
= 10 V, I
D
= 41 A
6.7
8.4
m
Ω
R
DS(on)2
V
GS
= 5.0 V, I
D
= 41 A
7.9
11
m
Ω
Drain to Source On-state Resistance
R
DS(on)3
V
GS
= 4.5 V, I
D
= 41 A
8.4
12
m
Ω
Input Capacitance
C
iss
4400
6600
pF
Output Capacitance
C
oss
550
830
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
270
490
pF
Turn-on Delay Time
t
d(on)
28
61
ns
Rise Time
t
r
16
39
ns
Turn-off Delay Time
t
d(off)
92
180
ns
Fall Time
t
f
V
DD
= 28
V, I
D
= 41
A,
V
GS
= 10
V,
R
G
= 1
Ω
18
45
ns
Total Gate Charge
Q
G1
I
D
= 82
A, V
DD
= 44
V, V
GS
= 10 V
80
120
nC
Q
G2
45
68
nC
Gate to Source Charge
Q
GS
15
nC
Gate to Drain Charge
Q
GD
V
DD
= 44
V,
V
GS
= 5.0 V,
I
D
= 82
A
24
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 82 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
47
ns
Reverse Recovery Charge
Q
rr
I
F
= 82 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
66
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
Ω
50
Ω
D.U.T.
L
V
DD
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
μ
s
Duty Cycle
≤
1%
τ
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
相关PDF资料 |
PDF描述 |
|---|---|
| NP82N055ELE-E1-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055ELE-E2-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055KLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055KLE-E1-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055KLE-E2-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP82N055EHE | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055EHE-E1-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055EHE-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055ELE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 82A I(D) | TO-263AB |
| NP82N055ELE-E1-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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