参数资料
型号: NP82N055KHE-E1-AY
厂商: NEC Corp.
元件分类: MOSFETs
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
中文描述: MOS场效应晶体管的开关N沟道功率场效应晶体管
文件页数: 6/10页
文件大小: 211K
代理商: NP82N055KHE-E1-AY
Data Sheet D14138EJ6V0DS
6
NP82N055EHE, NP82N055KHE, NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
18
Pulsed
T
ch
- Channel Temperature -
°
C
R
D
Ω
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
Figure15. SWITCHING CHARACTERISTICS
0
50
4
6
8
10
2
12
14
0
50
100
150
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
16
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
= 10 V
I
D
= 41 A
1.5
I
F
0
V
F(S-D)
- Source to Drain Voltage - V
1.0
0.5
Pulsed
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
1
0.1
0.1
100
1000
10000
1
10
100
V
= 0 V
f = 1 MHz
1
10
1000
100
10
100
V
G
I
F
- Diode Forward Current - A
t
r
di/dt = 100 A/
μ
s
V
GS
= 0 V
1
0.1
10
1.0
10
100
Q
G
- Gate Charge - nC
V
D
00
80
40
20
60
20
40
60
80
2
4
V
DS
1000
100
6
10
12
14
16
8
V
GS
V
DD
= 44 V
I
D
= 82 A
28 V
11 V
0 V
V
GS
= 10 V
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
t
f
t
r
V
DD
= 28 V
V
GS
= 10 V
R
G
= 1
Ω
相关PDF资料
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NP82N055KHE-E2-AY MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP82N055MHE MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
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相关代理商/技术参数
参数描述
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NP82N055KHE-E2-AY 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
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NP82N055KLE-E1-AY 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP82N055KLE-E2-AY 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET