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参数资料
| 型号： | NP82N06PLG-E1-AY |
| 厂商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | 开关N沟道功率场效应晶体管 |
| 文件页数： | 3/8页 |
| 文件大小： | 201K |
| 代理商： | NP82N06PLG-E1-AY |
Data Sheet D18777EJ1V0DS
3
NP82N06PLG
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
20
40
60
80
100
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°
C
T
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
D
0.1
1
10
100
1000
0.1
1
10
100
I
D(pulse)
T
C
= 25
°
C
Single Pulse
DC
I
D(DC)
R
DSon)
L0 V)
(V
GS
=1
Pwe DsiainLme
PW =1
00
μ
s
1
m
i
1
0m
i
s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
0.01
0.1
1
10
100
R
th(ch-A)
= 83.3
°
C/W
i
R
th(ch-C)
= 1.05
°
C/W
i
Single Pulse
PW - Pulse Width - s
100
μ
1 m 10 m 100 m 1 10 100 1000
相关PDF资料 |
PDF描述 |
|---|---|
| NP82N06PLG-E2-AY | SWITCHING N-CHANNEL POWER MOS FET |
| NP82P04PLF-E2-AY | MOS FIELD EFFECT TRANSISTOR |
| NP82P04PLF | MOS FIELD EFFECT TRANSISTOR |
| NP82P04PLF-E1-AY | MOS FIELD EFFECT TRANSISTOR |
| NP83P04PDG-E1-AY | MOS FIELD EFFECT TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP82N06PLG-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| NP82N10PUF | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP82N10PUF-E1-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP82N10PUF-E2-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP82OR | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G DUPLEX NYL ORANGE |
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