- 您现在的位置：买卖IC网 > PDF目录363378 > NP83P04PDG-E1-AY (NEC Corp.) MOS FIELD EFFECT TRANSISTOR PDF资料下载
参数资料
| 型号： | NP83P04PDG-E1-AY |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS场效应管 |
| 文件页数： | 6/7页 |
| 文件大小： | 188K |
| 代理商： | NP83P04PDG-E1-AY |
Data Sheet D18690EJ3V0DS
6
NP83P04PDG
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
No plating
7.88 MIN.
2.54
0.75 ±0.2
0.5
9
8
2
1
1
2
1
3
4
2
4.45 ±0.2
1.3 ±0.2
0.6 ±0.2
0 to 8
0.25
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.025
to 0.25
10.0 ±0.3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
相关PDF资料 |
PDF描述 |
|---|---|
| NP83P04PDG-E2-AY | MOS FIELD EFFECT TRANSISTOR |
| NP83P04PDG | MOS FIELD EFFECT TRANSISTOR |
| NP83P06PDG | MOS FIELD EFFECT TRANSISTOR |
| NP83P06PDG-E1-AY | MOS FIELD EFFECT TRANSISTOR |
| NP83P06PDG-E2-AY | MOS FIELD EFFECT TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP83P04PDG-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| NP83P04PDG-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP83P06PDG | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP83P06PDG-E1-AY | 功能描述:MOSFET P-CH -60V 83A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP83P06PDG-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。