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参数资料
| 型号： | NP83P06PDG-E2-AY |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS场效应管 |
| 文件页数： | 5/7页 |
| 文件大小： | 188K |
| 代理商： | NP83P06PDG-E2-AY |
Data Sheet D18691EJ3V0DS
5
NP83P06PDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
D
Ω
0
5
10
15
20
-75
-25
25
75
125
175
225
I
D
=
41.5 A
Pulsed
10V
V
GS
=
4.5 V
T
ch
- Channel Temperature -
°
C
i
,
o
,
r
100
1000
10000
100000
-0.1
-1
-10
-100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
d
,
r
,
d
,
f
1
10
100
1000
-0.1
-1
-10
-100
t
r
t
d(off)
t
d(on)
t
f
V
DD
=
30 V
V
GS
=
10 V
R
G
= 0
Ω
I
D
- Drain Current - A
D
0
-10
-20
-30
-40
-50
-60
0
40
80
120
160
200
0
-2
-4
-6
-8
-10
-12
V
DS
V
DD
=
48 V
I
D
=
83 A
V
GS
30 V
12 V
Q
G
- Gate Charge - nC
G
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
F
-0.01
-0.1
-1
-10
-100
-1000
0
0.5
1
1.5
V
GS
=
10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
r
1
10
100
1000
-0.1
-1
-10
-100
di/dt =
100 A/
μ
s
V
GS
= 0 V
I
F
- Diode Forward Current - A
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