参数资料
型号: NP88N03KUG-E1-AY
厂商: Renesas Electronics America
文件页数: 6/9页
文件大小: 0K
描述: MOSFET N-CH 30V 88A TO-263
标准包装: 800
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 88A
开态Rds(最大)@ Id, Vgs @ 25° C: 2.4 毫欧 @ 44A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 250nC @ 10V
输入电容 (Ciss) @ Vds: 14400pF @ 25V
功率 - 最大: 1.8W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263
包装: 带卷 (TR)
NP88N03KUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
400
350
Pulsed
1000
100
V DS = 10 V
Pulse
300
250
200
150
V GS = 10 V
10
1
0.1
T A = 175°C
125°C
85°C
? 55°C
25°C
100
50
0
0.01
0.001
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
6
V DS - Drain to Source Voltage - V
GATE SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
3.5
3
100
V DS = 10 V
Pulsed
T A = ? 55°C
25°C
85°C
2.5
2
1.5
1
10
125°C 175°C
0.5
0
V DS = V GS
I D = 250 μ A
1
-100
-50
0
50
100
150
200
0.1
1
10
100
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
5
4
3
2
V GS = 10 V
Pulsed
10
9
8
7
6
5
4
3
I D = 88 A
44 A
17.6 A
Pulsed
1
2
0
1
10
100
1000
1
0
0
4
8
12
16
20
4
I D - Drain Current – A
Data Sheet D16854EJ1V0DS
V GS - Gate to Source Voltage - V
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