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参数资料
| 型号： | NP88N04KHE-E2-AY |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | MOS场效应晶体管的开关N沟道功率MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 225K |
| 代理商： | NP88N04KHE-E2-AY |
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MOS FIELD EFFECT TRANSISTOR
NP88N04EHE, NP88N04KHE
NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
Document No. D14236EJ8V0DS00 (8th edition)
Date Published October 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1999, 2000, 2007
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP88N04EHE-E1-AY
Note1, 2
NP88N04EHE-E2-AY
Note1, 2
TO-263 (MP-25ZJ) typ. 1.4 g
NP88N04KHE-E1-AY
Note1
NP88N04KHE-E2-AY
Note1
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP88N04CHE-S12-AZ
Note1, 2
Sn-Ag-Cu
TO-220 (MP-25) typ. 1.9 g
NP88N04DHE-S12-AY
Note1, 2
TO-262 (MP-25 Fin Cut) typ. 1.8 g
NP88N04MHE-S18-AY
Note1
TO-220 (MP-25K) typ. 1.9 g
NP88N04NHE-S18-AY
Note1
Pure Sn (Tin)
Tube 50 p/tube
TO-262 (MP-25SK) typ. 1.8 g
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 4.3 m
Ω MAX. (VGS = 10 V, ID = 44 A)
Low input capacitance
Ciss = 7300 pF TYP.
Built-in gate protection diode
<R>
(TO-220)
(TO-262)
(TO-263)
相关PDF资料 |
PDF描述 |
|---|---|
| NP88N04KHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N055DLE-S12-AY | 88 A, 55 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| NP89-12110MF-G4 | PGA121, IC SOCKET |
| NP89-14409MF-G4-BF | PGA144, IC SOCKET |
| NP89-19601MF-G4-BF | PGA196, IC SOCKET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP88N04KUG-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| NP88N04KUG-E1-AY | 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET, NCH, 40V, TO263ZK - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 88A TO-263 |
| NP88N04KUG-E1-AZ | 功能描述:MOSFET N-CH 40V 88A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP88N04MHE | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04MHE-AY | 制造商:Renesas Electronics Corporation 功能描述: |
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