参数资料
型号: NSB8JT-E3/81
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 125K
描述: DIODE GPP 8A 600V PLAST TO263AB
标准包装: 800
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 8A
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 8A
速度: 标准恢复 >500ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 10µA @ 600V
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 带卷 (TR)
‘lllvVISHAYQV
www.vishay.com
Ns8xT, NsF8xT, NsB8xT
Vishay General Semiconductor
RATINGS AND cHARAcTERIsTIcs cunvEs (TA = 25 0C unless otherwise noted)
10
60 Hz Reslsuve or Inducuve Load
5 ll
6 ill
0 50 100 150
Case Temperature (“C)
Average Fonlvard Current (A)
Fig. 1 - Fcm/ard Current Derating Cun/e
175
150 T J : TJ Max.8.3 ms Smgle Half Slne—Wave
_rxJn
125 if 1.0 Cycle
100
\lat
mo
Peak Forward Surge Current (A)
l\)
01
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak FonNard Surge Current
100
instantaneous Fonlvard Current (A)
E
0.10.6 0.5 1.0 1.2 1.4 1.6 1.5 2.0
instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous FonNard Characteristics
Revision: 20-Jan-14
3For technical questions within your region: DiogesArnericas@vishay.corn, DiogesAsia@vishay.com, DigdesEurope@vishay.com
100
D
instantaneous Reverse Current (IJA)
0 20 40 so 50 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
120
100
a75
:>D
Junction Capacitance (pF)
N 0):1 D
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Leg
Document Number: 88690
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT To SPECIFIC DISCLAIMERS, SET FORTH AT www.vishmd C7910
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