参数资料
| 型号： | NSQA6V8AW5T2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS ARRAY QUAD LO CAP SOT-353 |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6.4V |
| 功率（瓦特）： | 20W |
| 电极标记： | 4 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP（5 引线），SC-88A，SOT-353 |
| 供应商设备封装： | SC-88A |
| 包装： | 带卷 (TR) |
| 其它名称： | NSQA6V8AW5T2OS |
NSQA6V8AW5T2 Series
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
P pk
C
Forward Current
Forward Voltage @ I F
Peak Power Dissipation
Capacitance @ V R = 0 and f = 1.0 MHz
I PP
Uni ? Directional
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
NSQA6V8AW5T2
Breakdown Voltage (I T = 1 mA) (Note 3)
Leakage Current (V RWM = 5.0 V)
Clamping Voltage 1 (I PP = 1.6 A) (Note 4)
Maximum Peak Pulse Current (Note 4)
Junction Capacitance ? (V R = 0 V, f = 1 MHz)
? (V R = 3.0 V, f = 1 MHz)
Clamping Voltage ? Per IEC61000 ? 4 ? 2
V BR
I R
V C
I PP
C J
V C
6.4
?
?
?
?
?
6.8
?
?
?
12
6.7
Figures 1 and 2
7.1
1.0
13
1.6
15
9.5
V
m A
V
A
pF
V
NSQA12VAW5T2
Breakdown Voltage (I T = 5 mA) (Note 3)
Leakage Current (V RWM = 9.0 V)
Zener Impedence (I T = 5 mA)
Clamping Voltage 1 (I PP = 0.9 A) (Note 4)
Maximum Peak Pulse Current (Note 4)
Junction Capacitance ? (V R = 0 V, f = 1 MHz)
Clamping Voltage ? Per IEC61000 ? 4 ? 2 (Note 5)
V BR
I R
Z Z
V C
I PP
C J
V C
11.4
?
?
?
?
?
12.0
?
?
?
?
?
Figures 1 and 2
12.7
0.05
30
23
0.9
15
V
m A
W
V
A
pF
V
3. V BR is measured at pulse test current I T .
4. Surge current waveform per Figure 5.
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NSQA6V8AW5T2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low Capacitance TVS Quad Array for ESD Protection |
| NSQA6V8AW5T2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Quad Array for ESD Protection |
| NSQA6V8AW5T2_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage |
| NSQA6V8AW5T2G | 功能描述:TVS二极管阵列 Low Cap. TVS Quad Array for ESD RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| NSQAU040 | 制造商:TI 制造商全称:Texas Instruments 功能描述:DP83848J PHYTER Mini LS Commercial Temperature Single Port 10/100 Mb/s Ethernet Transceiver |
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