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| 型号： | NSR0230P2T5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 84K |
| 描述： | DIODE SCHOTTKY 30V 200MA SOD-923 |
| 产品变化通告： | Copper Wire Change 19/May/2010 |
| 产品目录绘图： | Rectifier SOD-923 Pkg |
| 标准包装： | 1 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 500mV @ 200mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 10V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-923 |
| 供应商设备封装： | SOD-923 |
| 包装： | 标准包装 |
| 产品目录页面： | 1569 (CN2011-ZH PDF) |
| 其它名称： | NSR0230P2T5GOSDKR |
?
Semiconductor Components Industries, LLC, 2013
September, 2013 ?
Rev. 2
1
Publication Order Number:
NSR0230P2/D
NSR0230P2, NSVR0230P2,
Schottky Barrier Diode
These Schottky barrier diodes are designed for high?speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand?held and portable
applications where space is limited.
Features
?
Extremely Fast Switching Speed
?
Extremely Low Forward Voltage 0.325 V (max) @ IF
= 10 mA
?
Low Reverse Current
?
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC?Q101
Qualified and PPAP Capable
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Vdc
Forward Current DC
IF
200
mA
Forward Current Surge Peak
(60 Hz, 1 cycle)
IFSM
1.0
A
ESD Rating: Class 3B per Human Body Model
ESD Rating: Class C per Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 1) TA
= 25
°C
Derate above 25°C
PD
200
2.0
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
600
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
?55 to
+125
°C
1. FR?5 Minimum Pad.
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(VR
= 10 V)
IR
?
?
10
A
Forward Voltage
(IF
= 10 mA)
(IF
= 200 mA)
VF
?
?
?
?
0.325
0.500
Vdc
30 V SCHOTTKY
BARRIER DIODE
Device Package Shipping?
ORDERING INFORMATION
NSR0230P2T5G SOD?923
(Pb?Free)
2 mm Pitch
8000/Tape & Reel
1
CATHODE
2
ANODE
http://onsemi.com
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOD?923
CASE 514AA
K = Specific Device Code*
(Character is rotated 270°
clockwise)
M = Month Code
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING
DIAGRAM
K M
12
1
2
NSVR0230P2T5G SOD?923
(Pb?Free)
2 mm Pitch
8000/Tape & Reel
相关PDF资料 |
PDF描述 |
|---|---|
| NSR0240HT1G | DIODE SCHOTTKY 40V 250MA SOD323 |
| NSR0240P2T5G | DIODE SCHOTTKY 40V 200MA SOD-923 |
| NSR0240V2T1G | DIODE SCHOTTKY 40V 250MA SOD523 |
| NSR02F30NXT5G | DIODE SCHOTTKY 30V 200MA 2DSN |
| NSR02L30NXT5G | DIODE SCHOTTKY 30V 200MA 2DSN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NSR0230P2T5G_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode |
| NSR0230P2T5H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NSR023D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode |
| NSR0240HT1G | 功能描述:肖特基二极管与整流器 SCHTY BARRIER DIO RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSR0240P2T5G | 功能描述:肖特基二极管与整流器 40V SCHOTTKY DIODE SOD923 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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