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| 型号： | NSR0320XV6T5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 44K |
| 描述： | DIODE SCHOTTKY 200MW 23V SOT563 |
| 产品变化通告： | Wire Bond Change 01/Dec/2010 |
| 标准包装： | 8,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 23V |
| 电流 - 平均整流 (Io)： | 1A（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 500mV @ 900mA |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 50µA @ 15V |
| 电容@ Vr, F： | 35pF @ 5V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
| 其它名称： | NSR0320XV6T5GOS |
           ? Semiconductor Components Industries, LLC, 2007 February, 2007 ? Rev. 6 Publication Order Number: NSR0320XV6T1/D NSR0320XV6T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features ? Low Forward Voltage ? 0.35 V (Typ) @ IF = 10 mAdc ? High Current Capability ? These are Pb?Free Devices MAXIMUM RATINGS (TJ = 125 °C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 23 V Forward Power Dissipation @ TA = 25 °C Derate above 25°C PF 200 2.0 mW mW/°C Forward Current (DC) ? Continuous IF 1 A Forward Current t = 8.3 ms Half Sinewave; JEDEC Method IF 7.5 A Junction Temperature TJ 125 Max °C Storage Temperature Range Tstg ?55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Total Capacitance (VR = 5.0 V, f = 1.0 MHz) CT ? 30 35 pF Reverse Leakage (VR = 15 V) IR ? 10 50 Adc Forward Voltage (IF = 10 mAdc) VF ? 0.24 0.27 Vdc Forward Voltage (IF = 100 mAdc) VF ? 0.30 0.35 Vdc Forward Voltage (IF = 900 mAdc) VF ? 0.45 0.50 Vdc MARKING DIAGRAM HIGH CURRENT SCHOTTKY BARRIER DIODE 1, 2, 5, 6 CATHODE 3, 4 ANODE Device Package Shipping? ORDERING INFORMATION NSR0320XV6T1 SOT?563* 4000/Tape & Reel SOT?563 CASE 463A STYLE 5 http://onsemi.com 1 ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. RD = Specific Device Code M = Month Code = Pb?Free Package RD M 1 NSR0320XV6T1G SOT?563* 4000/Tape & Reel *This package is inherently Pb?Free. (Note: Microdot may be in either location) NSR0320XV6T5 SOT?563* 8000/Tape & Reel NSR0320XV6T5G SOT?563* 8000/Tape & Reel |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NSR0320XV6TD | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode |
| NSR0340HT1G | 功能描述:肖特基二极管与整流器 SCHTY BARRIER DIO RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSR0340P2T5G | 功能描述:肖特基二极管与整流器 40V SCHOTTKY DIODE SOD923 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSR0340V2T1G | 功能描述:肖特基二极管与整流器 SCHTY BARRIER DIO RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSR040A0X_11 | 制造商:LINEAGEPOWER 制造商全称:LINEAGEPOWER 功能描述:Naos Raptor 40A Non-Isolated Power Modules |
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