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参数资料
| 型号： | NT511740C5J-70 |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC?s CMOS silicon gate technology. |
| 中文描述： | 该NT511740C5J是4194304字× 4位动态随机存储器的NTC热敏假的吗？拧CMOS硅栅技术。 |
| 文件页数： | 3/18页 |
| 文件大小： | 336K |
| 代理商： | NT511740C5J-70 |
3
NANYA TECHNOLOGY CORP
NANYA TECHNOLOGY CORP.
reserves the right to change products and specifications without notice.
NT5117405J
4,194,304-word X 4-bit
Dynamic RAM : Fast Page Mode with EDO
1.
DESCRIPTION
3. PRODUCT FAMILY
Family
Access Time (Max.)
Cycle Time
Power Dissipation
t
RAC
50ns 25ns
60 ns 30 ns
70 ns 35 ns
t
AA
t
CAC
13ns
15 ns
20 ns
t
OEA
(Min.)
84ns
104 ns
124 ns
Operation(Max.)
660mW
605mW
550 mW
Standby(Max.)
NT511740C5J-50
NT511740C5J-60
NT511740C5J-70
13ns
15 ns
20 ns
5.5 mW
The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon
gate technology. The NT511740C5J achieves high integration , high-speed operation , and low-
power consumption due to quadruple polysilicon double metal CMOS. The NT511740C5J is
available in a 26/24-pin plastic SOJ.
2. FEATURES
l
4,194,304-word x 4-bit configuration
l
Single 5V power supply,+/-10% tolerance
l
Input :TTL compatible , low input capacitance
l
Output :TTL compatible , 3-state
l
Refresh :2048 cycles/32 ms
l
Fast page mode with EDO, read modify write capability
l
/CAS before /RAS refresh, hidden refresh, /RAS-only refresh capability
l
Multi-bit test mode capability
l
Package options:
26/24-Pin 300 mil plastic SOJ (SOJ26/24-P300) (Product:NT511740C5J-XX)
XX indicates speed rank.
相关PDF资料 |
PDF描述 |
|---|---|
| NT511740D0J-60 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-6L | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-50 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-5L | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NT511740D0J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-50 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-5L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-6L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
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