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参数资料
| 型号： | NT511740D0J-5L |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| 中文描述： | 该NT511740C5J是4194304字× 4位动态随机存储器的非贸易CMOS硅栅技术制造。 |
| 文件页数： | 5/20页 |
| 文件大小： | 162K |
| 代理商： | NT511740D0J-5L |
NT511740D0J
16MEG : x4
Fast Page Mode DRAM
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
REV 1.0 , JULY. 2000
5
NAYNA TECHNOLOGY CORP. reserves the right to change products aNANYA TECHNOLOGY CORP.
Parameter
Symbol
V
IN
,
V
OUT
V
CC
I
OS
P
D
*
T
opr
T
stg
Rating
-1.0 to +7.0
-1.0 to +7.0
50
1
0 to 70
-55 to 150
Unit
V
V
mA
W
°
C
°
C
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operation Temperature
Storage Temperature
*:Ta = 25
°
C
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should
be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
(Voltage referenced to Vss, Ta = 0
°
C to 70
°
C )
Parameter
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
-1.0
*2
Typ.
5.0
0
-
-
Max.
5.5
0
Vcc+1.0
*1
0.8
Unit
V
V
V
V
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*1 : V
cc
+2.0V/20ns(5V), Pulse width is measured at V
cc
*2 : -2.0V/20ns(5V), Pulse width is measured at V
ss
Capacitance
( Vcc = 5V, Ta = 25
°
C, f = 1 MHZ )
Parameter
Symbol
C
IN1
C
IN2
C
I/O
Typ.
-
Max.
5
Unit
pF
Input Capacitance (A0-A11)
Input Capacitance (
RAS
,
CAS
,
WE
,
OE
)
Output Capacitance (DQ0-DQ3)
-
-
7
7
pF
pF
DC Characteristics
(Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0 <= V
IN
<=
V
IN
+0.5V, all other input pins not under test =0 Volt)
Output Leakage Current
(Data out is disabled, 0 <= V
OUT
<=
V
CC
)
Output High Voltage Level (I
OH
= -5mA)
Output Low Voltage Level (I
OL
=4.2mA)
I
I(L)
-5
5
uA
I
O(L)
-5
5
uA
V
OH
V
OL
2.4
-
-
V
V
5V
0.4
相关PDF资料 |
PDF描述 |
|---|---|
| NT511740D5J-50 | CMOS with Extended Data Out |
| NT511740D5J-5L | CMOS with Extended Data Out |
| NT511740D5J | CMOS with Extended Data Out |
| NT511740D5J-60 | CMOS with Extended Data Out |
| NT511740D5J-6L | CMOS with Extended Data Out |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NT511740D0J-60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-6L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D5J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:CMOS with Extended Data Out |
| NT511740D5J-50 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:CMOS with Extended Data Out |
| NT511740D5J-5L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:CMOS with Extended Data Out |
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