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参数资料
| 型号： | NT511740D0J |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| 中文描述： | 该NT511740C5J是4194304字× 4位动态随机存储器的非贸易CMOS硅栅技术制造。 |
| 文件页数： | 7/20页 |
| 文件大小： | 162K |
| 代理商： | NT511740D0J |
NT511740D0J
16MEG : x4
Fast Page Mode DRAM
REV 1.0 , JULY. 2000
7
NAYNA TECHNOLOGY CORP. reserves the right to change products NANYA TECHNOLOGY CORP.
AC CHARACTERISTICS
(0
°
C
≤
Ta
≤
70
°
C , See note 1,2) ; Test condition : VCC=5.0V
±
10%, V
IH
/V
IL
=2.4/0.8V, V
OH
/V
OL
=2.0/0.8V
-50
-60
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Random read or write cycle time
t RC
90
-
110
-
ns
Read-modify-write cycle time
Access time from
RAS
t RWC
t RAC
131
155
ns
ns
50
60
3,4,10
Access time from
CAS
t CAC
13
15
ns
3,4,5
Access time from column address
CAS
to output in Low-Z
t AA
t CLZ
25
30
ns
ns
3,10
3
0
0
Output buffer turn-off delay
t OFF
0
13
0
15
ns
6
Transition time (rise and fall)
RAS
precharge time
t T
t RP
3
30
3
40
ns
ns
2
RAS
pulse width
t RAS
50
60
ns
RAS
hold time
CAS
hold time
t RSH
t CSH
13
50
15
60
ns
ns
CAS
pulse width
t CAS
13
15
ns
RAS
to
CAS
delay time
RAS
to column address delay time
t RCD
t RAD
17
12
37
20
15
45
ns
ns
4
10
CAS
to
RAS
precharge time
t CRP
5
5
ns
Row address set-up time
Row address hold time
t ASR
t RAH
0
7
0
10
ns
ns
Column address set-up time
t ASC
0
0
ns
Column address hold time
Column address to
RAS
lead time
t CAH
t RAL
7
25
10
30
ns
ns
Read command set-up time
t RCS
0
0
ns
Read command hold time referenced to
CAS
Read command hold time referenced to
RAS
t RCH
t RRH
0
0
0
0
ns
ns
8
8
Write command hold time
t WCH
7
10
ns
Write command pulse width
Write command to
RAS
lead time
t WP
t RWL
7
13
10
15
ns
ns
Write command to
CAS
lead time
t CWL
7
10
ns
Data set-up time
Data hold time
t DS
t DH
0
7
0
10
ns
ns
9
9
Refresh period (2K, Normal)
t REF
32
32
ms
Refresh period (L-ver)
Write command set-up time
t REF
t WCS
128
128
ms
ns
0
0
7
相关PDF资料 |
PDF描述 |
|---|---|
| NT511740D0J-50 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-5L | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D5J-50 | CMOS with Extended Data Out |
| NT511740D5J-5L | CMOS with Extended Data Out |
| NT511740D5J | CMOS with Extended Data Out |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NT511740D0J-50 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-5L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-6L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D5J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:CMOS with Extended Data Out |
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