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| 型号： | NTB125N02R |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 24V 15.9A D2PAK |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 15.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.6 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3440pF @ 20V |
| 功率 - 最大： | 1.98W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
NTB125N02R, NTP125N02R
Power MOSFET
125 A, 24 V N?Channel
TO?220, D 2 PAK
Features
? Planar HD3e Process for Fast Switching Performance
? Body Diode for Low t rr and Q rr and Optimized for Synchronous
http://onsemi.com
?
?
?
?
Operation
Low C iss to Minimize Driver Loss
Optimized Q gd and R DS(on) for Shoot?through Protection
Low Gate Charge
Pb?Free Packages are Available
125 AMPERES, 24 VOLTS
R DS(on) = 3.7 m W (Typ)
D
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
Parameter
Drain?to?Source Voltage
Gate?to?Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
24
± 20
Unit
V dc
V dc
G
S
Thermal Resistance ? Junction?to?Case
Total Power Dissipation @ T C = 25 ° C
Drain Current ?
Continuous @ T C = 25 ° C, Chip
Continuous @ T C = 25 ° C, Limited by Package
Continuous @ T A = 25 ° C, Limited by Wires
Single Pulse (t p = 10 m s)
Thermal Resistance ?
Junction?to?Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
R q JC
P D
I D
I D
I D
I D
R q JA
P D
I D
1.1
113.6
125
120.5
95
250
46
2.72
18.6
° C/W
W
A
A
A
A
° C/W
W
A
4
TO?220AB
CASE 221A
STYLE 5
MARKING
DIAGRAMS
125N2RG
AYWW
Thermal Resistance ?
Junction?to?Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
R q JA
P D
I D
63
1.98
15.9
° C/W
W
A
1
2
3
Operating and Storage Temperature Range
T J , T stg
?55 to
° C
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 V dc , V GS = 10 V dc , I L = 15.5 A pk ,
L = 1 mH, R G = 25 W )
E AS
150
120
mJ
1
2
3
4
D 2 PAK
CASE 418AA
STYLE 2
125N2G
AYWW
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
T L
260
° C
125N2x
= Device Code
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in 2 ).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in 2 ).
x
A
Y
WW
G
=R
= Assembly Location
= Year
= Work Week
= Pb?Free Package
PIN ASSIGNMENT
ORDERING INFORMATION
PIN
1
2
3
4
FUNCTION
Gate
Drain
Source
Drain
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
April, 2006 ? Rev. 7
1
Publication Order Number:
NTB125N02R/D
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| NTB125N02R_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK |
| NTB125N02RG | 功能描述:MOSFET 24V 125A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB125N02RT4 | 功能描述:MOSFET 24V 125A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB125N02RT4G | 功能描述:MOSFET 24V 125A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB12N50 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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