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| 型号： | NTB18N06LG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 15A D2PAK |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 7.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 440pF @ 25V |
| 功率 - 最大： | 48.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
NTP18N06L, NTB18N06L
Power MOSFET
15 Amps, 60 Volts,
Logic Level
N?Channel TO?220 and D 2 PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
15 AMPERES, 60 VOLTS
R DS(on) = 100 m W
Features
? Pb?Free Packages are Available
N?Channel
D
Typical Applications
?
?
?
?
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
4
Rating
Symbol
Value
Unit
4
Drain?to?Source Voltage
Drain?to?Gate Voltage (R GS = 10 m W )
V DSS
V DGR
60
60
Vdc
Vdc
1
2
3
Gate?to?Source Voltage
? Continuous
? Non?Repetitive (t p v 10 ms)
Drain Current
? Continuous @ T C = 25 ° C
? Continuous @ T C = 100 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
V GS
I D
I D
I DM
P D
" 10
" 20
15
8.0
45
48.4
0.32
Vdc
Adc
Adc
A pk
W
W/ ° C
1
2
3
TO?220AB D 2 PAK
CASE 221A CASE 418AA
STYLE 5 STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Operating and Storage Temperature Range
T J , T stg
?55 to
° C
Drain
+175
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 5.0 Vdc, V DS = 60 Vdc,
I L(pk) = 11 A, L = 1.0 mH, R G = 25 W )
E AS
61
mJ
NTx18N06LG
AYWW
NTx
18N06LG
AYWW
Thermal Resistance
? Junction?to?Case
R q JC
3.1
° C/W
1
3
1
Gate
2
Drain
3
Source
? Junction?to?Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
R q JA
T L
72.5
260
° C
Gate
2
Drain
Source
NTx18N06L
= Device Code
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
x
A
Y
WW
G
= B or P
= Assembly Location
= Year
= Work Week
= Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 4
1
Publication Order Number:
NTP18N06L/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB18N06LT4 | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB18N06LT4G | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB18N06T4 | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB18N06T4G | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB22N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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