- 您现在的位置：买卖IC网 > Datasheet目录486 > NTB25P06G (ON Semiconductor)MOSFET P-CH 60V 27.5A D2PAK Datasheet资料下载
参数资料
| 型号： | NTB25P06G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 27.5A D2PAK |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 27.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 82 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1680pF @ 25V |
| 功率 - 最大： | 120W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
NTB25P06, NVB25P06
Power MOSFET
? 60 V, ? 27.5 A, P ? Channel D 2 PAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
Features
? AEC Q101 Qualified ? NVB25P06
? These Devices are Pb ? Free and are RoHS Compliant
Typical Applications
? PWM Motor Controls
? Power Supplies
? Converters
? Bridge Circuits
V (BR)DSS
? 60 V
http://onsemi.com
R DS(on) TYP
65 m W @ ? 10 V
P ? Channel
D
I D MAX
? 27.5 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Value
Unit
G
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (t p v 10 ms)
V DSS
V GS
V GSM
? 60
" 15
" 20
V
V
Vpk
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain Current
? Continuous @ T A = 25 ° C
? Single Pulse (t p v 10 m s)
I D
I DM
27.5
80
A
Apk
Drain
Total Power Dissipation @ T A = 25 ° C
Operating and Storage
Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 V, V GS = 10 V,
I L(pk) = 20 A, L = 3 mH, R G = 25 W )
P D
T J , T stg
E AS
120
? 55 to
+175
600
W
° C
mJ
1
2
3
D 2 PAK
CASE 418B
4
Gate
NTB
25P06G
AYWW
Drain
Source
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
R q JC
R q JA
R q JA
1.25
46.8
63.2
° C/W
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
Maximum Lead Temperature for Soldering
Purposes, (1/8 ″ from case for 10 s)
T L
260
° C
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 ″ pad size
(Cu Area 1.127 in 2 ).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.412 in 2 ).
Device
NTB25P06T4G
NVB25P06T4G
Package
D 2 PAK
(Pb ? Free)
D 2 PAK
(Pb ? Free)
Shipping ?
800 / Tape & Reel
800 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 4
1
Publication Order Number:
NTB25P06/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTB30N06T4 | MOSFET N-CH 60V 27A D2PAK |
| NTB30N20T4G | MOSFET N-CH 200V 30A D2PAK |
| NTB35N15T4 | MOSFET N-CH 150V 37A D2PAK |
| NTB52N10T4G | MOSFET N-CH 100V 52A D2PAK |
| NTB5405NG | MOSFET N-CH 40V 116A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB25P06T4 | 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB25P06T4G | 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB27N06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK |
| NTB27N06L | 制造商:ON Semiconductor 功能描述:Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220 |
| NTB27N06LT4 | 功能描述:MOSFET N-CH 60V 27A D2PAK-3 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。