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参数资料
| 型号： | NTB52N10G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 52A D2PAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 产品目录绘图： | MOSFET D2PAK |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 52A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 26A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 135nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3150pF @ 25V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | NTB52N10G-ND NTB52N10GOS |
NTB52N10
Power MOSFET
52 Amps, 100 Volts
N ? Channel Enhancement ? Mode D 2 PAK
Features
http://onsemi.com
? Source ? to ? Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Avalanche Energy Specified
? I DSS and R DS(on) Specified at Elevated Temperature
? Mounting Information Provided for the D 2 PAK Package
? Pb ? Free Packages are Available
V DSS
100 V
R DS(ON) TYP
23 m W @ 10 V
N ? Channel
D
I D MAX
52 A
Typical Applications
? PWM Motor Controls
? Power Supplies
? Converters
G
V GS
I DM
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Drain ? to ? Source Voltage V DSS
Drain ? to ? Source Voltage (R GS = 1.0 M W ) V DGR
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (t p v 10 ms) V GSM
Drain Current
? Continuous @ T C = 25 ° C I D
? Continuous @ T C = 100 ° C I D
? Pulsed (Note 1)
Total Power Dissipation @ T C = 25 ° C P D
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range T J , T stg
Value
100
100
" 20
" 40
52
40
156
178
1.43
2.0
? 55 to
+150
Unit
Vdc
Vdc
Vdc
Adc
W
W/ ° C
W
° C
1
4
2
3
D 2 PAK
CASE 418B
STYLE 2
NTB52N10
A
Y
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
NTB
52N10G
AYWW
1 2 3
Gate Drain Source
= Device Code
= Assembly Location
= Year
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 10 Vdc,
I L(pk) = 40 A, L = 1.0 mH, R G = 25 W )
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient
? Junction ? to ? Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8in from case for 10 seconds
E AS
R q JC
R q JA
R q JA
T L
800
0.7
62.5
50
260
mJ
° C/W
° C
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
Device Package Shipping ?
NTB52N10 D 2 PAK 50 Units / Rail
NTB52N10G D 2 PAK 50 Units / Rail
(Pb ? Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu. Area 0.412 in 2 ).
NTB52N10T4 D 2 PAK 800 / Tape & Reel
NTB52N10T4G D 2 PAK 800 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
March, 2011 ? Rev. 4
1
Publication Order Number:
NTB52N10/D
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| NTB52N10G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTB52N10T4 | 功能描述:MOSFET 100V 52A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB52N10T4G | 功能描述:MOSFET 100V 52A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB5404N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 136 A, Single N−Channel, D2PAK & TO−220 |
| NTB5404NT4G | 功能描述:MOSFET NFET 40V 129A 5O RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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