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参数资料
| 型号： | NTB5426NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 120A D2PAK |
| 产品变化通告： | Reactivation Notice 08/Apr/2011 Product Obsolescence 21/Jan/2010 |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 60A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 170nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5800pF @ 25V |
| 功率 - 最大： | 215W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
NTB5426N, NTP5426N,
NVB5426N
Power MOSFET
120 Amps, 60 Volts
N-Channel D 2 PAK, TO-220
Features
? Low R DS(on)
? High Current Capability
? Avalanche Energy Specified
? AEC Q101 Qualified ? NVB5426N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
V (BR)DSS
60 V
http://onsemi.com
R DS(ON) MAX
6.0 m W @ 10 V
N ? Channel
D
G
I D MAX
(Note 1)
120 A
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
60
$ 20
Unit
V
V
4
S
Gate ? to ? Source Voltage ? Nonrepetitive
(T P < 10 m s)
Continuous Drain Steady T C = 25 ° C
Current R q JC State
(Note 1) T C = 100 ° C
V GS
I D
30
120
85
V
A
TO ? 220AB
1
2
3
D 2 PAK
4
Power Dissipation
R q JC (Note 1)
Steady
State
T C = 25 ° C
P D
215
W
1
2
3
CASE 221A
STYLE 5
CASE 418B
STYLE 2
Pulsed Drain Current
t p = 10 m s
I DM
260
A
MARKING DIAGRAMS
Operating and Storage Temperature Range
Source Current (Body Diode)
T J , T stg
I S
? 55 to
+175
60
° C
A
4
Drain
& PIN ASSIGNMENTS
4
Drain
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 V dc , V GS = 10 V dc , I L(pk) = 70 A,
L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
E AS
T L
735
260
mJ
° C
5426N
AYWW
1
Gate
3
Source
1
Gate
5426N
AYWW
2
Drain
3
Source
Parameter
Symbol
Max
Unit
2
Junction ? to ? Case (Drain)
Steady State (Note 1)
R q JC
0.7
° C/W
Drain
G
= Pb ? Free Device
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 1
1
Publication Order Number:
NTB5426N/D
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相关代理商/技术参数 |
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| NTB5605P | 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB5605P_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -60 Volt, -18.5 Amp |
| NTB5605PG | 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB5605PT4 | 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB5605PT4G | 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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