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| 型号： | NTB60N06LG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 60A D2PAK |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 30A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 65nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 3075pF @ 25V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
NTP60N06L, NTB60N06L
Power MOSFET
60 Amps, 60 Volts,
Logic Level
N?Channel TO?220 and D 2 PAK
http://onsemi.com
Designed for low voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
? Pb?Free Packages are Available
60 AMPERES, 60 VOLTS
R DS(on) = 16 m W
N?Channel
D
Typical Applications
?
?
?
?
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
4
Rating
Symbol
Value
Unit
Drain?to?Source Voltage
V DSS
60
Vdc
4
Drain?to?Gate Voltage (R GS = 10 M W )
V DGR
60
Vdc
1
2
D 2 PAK
Gate?to?Source Voltage
? Continuous
? Non?Repetitive (t p v 10 ms)
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A 100 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
V GS
V GS
I D
I D
I DM
P D
" 15
" 20
60
42.3
180
150
1.0
2.4
Vdc
Adc
Apk
W
W/ ° C
W
1
2
3
3
TO?220AB
CASE 221A CASE 418B
STYLE 5 STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
Operating and Storage Temperature Range
T J , T stg
?55 to
175
° C
NTx
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 75 Vdc, V GS = 5.0 Vdc,
E AS
454
mJ
NTx60N06LG
AYWW
60N06LG
AYWW
L = 0.3 mH, I L (pk) = 55 A,V DS = 60 Vdc)
Thermal Resistance,
? Junction?to?Case
? Junction?to?Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
R q JC
R q JA
T L
1.0
62.5
260
° C/W
° C
1
Gate
2
Drain
NTx60N06L = Device Code
3 1 2
Source Gate Drain
3
Source
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
x
A
Y
WW
G
= B or P
= Assembly Location
= Year
= Work Week
= Pb?Free Package
pad size, (Cu Area 0.412 in 2 ).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 3
1
Publication Order Number:
NTP60N06L/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB60N06LT4 | 功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB60N06LT4G | 功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB60N06T4 | 功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB60N06T4G | 功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB6410AN | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 76 A, 13 mΩ |
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