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参数资料
| 型号： | NTB6410ANT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 76A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 76A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 76A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 120nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4500pF @ 25V |
| 功率 - 最大： | 188W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
NTB6410AN, NTP6410AN,
NVB6410AN
N-Channel Power MOSFET
100 V, 76 A, 13 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
?
These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
100 V
http://onsemi.com
R DS(ON) MAX
13 m W @ 10 V
N ? Channel
I D MAX
(Note 1)
76 A
D
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
V DSS
V GS
100
$ 20
V
V
G
Continuous Drain
Current R q JC
Power Dissipation
R q JC
Steady
State
Steady
State
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
I D
P D
76
54
188
A
W
4
S
4
Pulsed Drain Current
t p = 10 m s
I DM
305
A
1
2
Operating Junction and Storage Temperature
Range
T J , T stg
? 55 to
+175
° C
TO ? 220AB
3
D 2 PAK
Drain
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc,
I L(pk) = 57.7 A, L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
I S
E AS
T L
76
500
260
A
mJ
° C
1
2
3
4
CASE 221A CASE 418B
STYLE 5 STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Parameter
Symbol
Max
Unit
3
1
3
Source
Gate
Source
Junction ? to ? Case (Drain) Steady State R q JC 0.8 ° C/W
Junction ? to ? Ambient (Note 1) R q JA 32
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
NTP
6410ANG
AYWW
2
Drain
NTB
6410ANG
AYWW
2
Drain
6410AN = Specific Device Code
G = Pb ? Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
January, 2012 ? Rev. 1
1
Publication Order Number:
NTB6410AN/D
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相关代理商/技术参数 |
参数描述 |
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| NTB6411AN | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 72 A, 14 mΩ |
| NTB6411ANG | 功能描述:MOSFET NFET D2PAK 100V 72A 14MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB6411ANT4G | 功能描述:MOSFET NFET D2PAK 100V 75A 16MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB6412AN | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ |
| NTB6412AN_12 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET |
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