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| 型号： | NTB65N02RT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 7.6A D2PAK |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.2 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1330pF @ 20V |
| 功率 - 最大： | 1.04W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTB65N02RT4OSCT |
NTB65N02R, NTP65N02R
Power MOSFET
65 A, 24 V N?Channel
TO?220, D 2 PAK
Features
? Planar HD3e Process for Fast Switching Performance
? Low R DSon to Minimize Conduction Loss
? Low C iss to Minimize Driver Loss
? Low Gate Charge
? Pb?Free Packages are Available*
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
V (BR)DSS
24 V
http://onsemi.com
R DS(on) TYP
8.4 m W @ 10 V
D
G
I D MAX
65 A
Parameter
Symbol
Value
Unit
Drain?to?Source Voltage
Gate?to?Source Voltage ? Continuous
Thermal Resistance ? Junction?to?Case
Total Power Dissipation @ T C = 25 ° C
V DSS
V GS
R q JC
P D
25
± 20
2.0
62.5
V dc
V dc
° C/W
W
S
MARKING
DIAGRAMS
Drain Current ?
Continuous @ T C = 25 ° C, Chip
Continuous @ T C =25 ° C, Limited by Package
Single Pulse (t p = 10 m s)
I D
I D
I DM
65
58
160
A
A
A
4
TO?220AB
Thermal Resistance ?
Junction?to?Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
R q JA
P D
I D
67
1.86
10
° C/W
W
A
CASE 221A
STYLE 5
P65N02RG
AYWW
Thermal Resistance ?
Junction?to?Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
R q JA
P D
I D
120
1.04
7.6
° C/W
W
A
1
2
3
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
T J and
T stg
E AS
?55 to
150
60
° C
mJ
2
1 3
4
D 2 PAK
CASE 418AA
STYLE 2
65N02RG
AYWW
(V DD = 50 V dc , V GS = 10 V dc , I L = 11 A pk ,
L = 1 mH, R G = 25 W )
65N02R = Specific Device Code
A = Assembly Location
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
T L
260
° C
Y = Year
WW = Work Week
G = Pb?Free Package
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
PIN ASSIGNMENT
reliability may be affected.
1. When surface mounted to an FR4 board using 1 in. pad size, (Cu Area 1.127 in 2 ).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in 2 ).
PIN
1
2
FUNCTION
Gate
Drain
*For additional information on our Pb?Free strategy and soldering details, please
3
4
Source
Drain
ORDERING INFORMATION
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
May, 2005 ? Rev. 6
1
Publication Order Number:
NTB65N02R/D
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相关代理商/技术参数 |
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| NTB65N02RT4G | 功能描述:MOSFET 24V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB6N60 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| NTB6N60T4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTB707 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-220AB |
| NTB708 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-220AB |
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