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| 型号： | NTB75N06G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 75A D2PAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 产品目录绘图： | MOSFET D2PAK |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.5 毫欧 @ 37.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4510pF @ 25V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | NTB75N06G-ND NTB75N06GOS |
NTP75N06, NTB75N06
Power MOSFET
75 Amps, 60 Volts, N?Channel
TO?220 and D 2 PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? Pb?Free Packages are Available
Typical Applications
http://onsemi.com
75 AMPERES, 60 VOLTS
R DS(on) = 9.5 m W
N?Channel
D
?
?
?
?
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
S
Rating
Drain?to?Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
MARKING
DIAGRAMS
4
Drain?to?Gate Voltage (R GS = 10 M W )
Gate?to?Source Voltage
V DGR
60
Vdc
Vdc
4
Drain
? Continuous
? Non?Repetitive (t p v 10 ms)
V GS
V GS
" 20
" 30
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
I D
I D
I DM
75
50
225
Adc
Apk
TO?220
CASE 221A
STYLE 5
75N06
AYWW
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C
Operating and Storage Temperature Range
P D
T J , T stg
214
1.4
2.4
?55 to
+175
W
W/ ° C
W
° C
1
2
3
1
Gate
2
Drain
4
Drain
3
Source
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 10 Vdc, L = 0.3 mH
E AS
844
mJ
4
D 2 PAK
75N06
I L(pk) = 75 A, V DS = 60 Vdc)
CASE 418B
AYWW
Thermal Resistance
° C/W
2
STYLE 2
? Junction?to?Case
? Junction?to?Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
R q JC
R q JA
T L
0.7
62.5
260
° C
3
75N06
1
Gate
= Device Code
2
Drain
3
Source
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
A
Y
WW
= Assembly Location
= Year
= Work Week
and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2004
August, 2004 ? Rev. 2
1
Publication Order Number:
NTP75N06/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB75N06G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTB75N06L | 功能描述:MOSFET N-CH 60V 75A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTB75N06LG | 功能描述:MOSFET NFET 60V .012R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N06LT4 | 功能描述:MOSFET N-CH 60V 75A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTB75N06LT4G | 功能描述:MOSFET NFET 60V .012R TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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