参数资料
型号: NTB85N03
厂商: ON Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH 28V 85A D2PAK
产品变化通告: Product Discontinuation 27/Jun/2007
Product Discontinuation 03/Apr/2007
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 28V
电流 - 连续漏极(Id) @ 25° C: 85A
开态Rds(最大)@ Id, Vgs @ 25° C: 6.8 毫欧 @ 40A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 29nC @ 4.5V
输入电容 (Ciss) @ Vds: 2150pF @ 24V
功率 - 最大: 80W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 管件
NTP85N03, NTB85N03
Power MOSFET
85 Amps, 28 Volts
N?Channel TO?220 and D 2 PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? Pb?Free Packages are Available
Typical Applications
http://onsemi.com
85 AMPERES, 28 VOLTS
R DS(on) = 6.1 m W (Typ)
N?Channel
D
?
?
?
?
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
4
Rating
Symbol
Value
Unit
Drain?to?Source Voltage
Gate?to?Source Voltage ? Continuous
V DSS
V GS
28
" 20
Vdc
Vdc
4
Drain Current
? Continuous @ T C = 25 ° C
? Single Pulse (t p = 10 m s)
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
I D
I DM
P D
85*
190
80
0.66
Adc
Apk
W
W/ ° C
1
2
3
TO?220AB
CASE 221A
STYLE 5
1
2
3
D 2 PAK
CASE 418AA
STYLE 2
Operating and Storage Temperature Range
T J , T stg
?55 to
+150
° C
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 28 Vdc, V GS = 10 Vdc, L = 5.0 mH,
I L(pk) = 17 A, RG = 25 W )
Thermal Resistance,
? Junction?to?Case
? Junction?to?Ambient (Note 1)
Maximum Lead Temperature for Soldering
E AS
R q JC
R q JA
T L
733
1.55
70
260
mJ
° C/W
° C
4
Drain
NTx85N03G
AYWW
4
Drain
NTx
85N03G
AYWW
Purposes, 1/8 in from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
1
Gate
3
Source
1
Gate
2
Drain
3
Source
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
2
Drain
*Chip current capability limited by package.
1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in 2 ).
NTx85N03
x
A
Y
WW
G
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 2
1
Publication Order Number:
NTP85N03/D
相关PDF资料
PDF描述
NTB75N06LT4G MOSFET N-CH 60V 75A D2PAK
NTB75N06LG MOSFET N-CH 60V 75A D2PAK
ASFLM1-8.000MHZ-L-C-T OSC MEMS 8.000 MHZ 3.0V SMD
6538S-1-502 POT 5.00K OHM 22MM PRECISION
252B154B60TA POT JOYSTICK 150K OHM
相关代理商/技术参数
参数描述
NTB85N03G 功能描述:MOSFET 28V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB85N03T4 功能描述:MOSFET 28V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB85N03T4G 功能描述:MOSFET 28V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB8N50 制造商:Rochester Electronics LLC 功能描述:- Bulk
NTB90N02 功能描述:MOSFET 28V 90A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube