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| 型号： | NTD12N10G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 12A DPAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 165 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 25V |
| 功率 - 最大： | 1.28W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 管件 |
| 其它名称： | NTD12N10G-ND NTD12N10GOS |
NTD12N10
Power MOSFET
12 Amps, 100 Volts
N ? Channel Enhancement ? Mode DPAK
Features
http://onsemi.com
? Source ? to ? Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Avalanche Energy Specified
? I DSS and R DS(on) Specified at Elevated Temperature
? Mounting Information Provided for the DPAK Package
? These are Pb ? Free Devices
V (BR)DSS
100 V
R DS(on) TYP
165 m W @ 10 V
N ? Channel
D
I D MAX
12 A
Typical Applications
? PWM Motor Controls
? Power Supplies
? Converters
G
S
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating Symbol
Drain ? to ? Source Voltage V DSS
Value
100
Unit
Vdc
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain ? to ? Source Voltage (R GS = 1.0 M W )
V DGR
100
Vdc
Drain
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (t p ≤ 10 ms)
Drain Current ? Continuous @ T A = 25 ° C
? Continuous @ T A =100 ° C
? Pulsed (Note 3)
Total Power Dissipation
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 10 Vdc,
I L = 12 Apk, L = 1.0 mH, R G = 25 W )
V GS
V GSM
I D
I D
I DM
P D
T J , T stg
E AS
± 20
± 30
12
7.0
36
56.6
0.38
1.76
1.28
? 55 to
+175
75
Vdc
Vpk
Adc
Apk
W
W/ ° C
W
W
° C
mJ
1 2
1
2
3
3
4
4
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
Gate
DPAK
CASE 369D
(Straight Lead)
STYLE 2
2
Drain
4
Drain
3
Source
Thermal Resistance
? Junction to Case
? Junction to Ambient (Note 1)
? Junction to Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
R q JC
R q JA
R q JA
T L
2.65
85
117
260
° C/W
° C
Y
WW
T12N10
1 2 3
Gate Drain Source
= Year
= Work Week
= Device Code
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
3. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
May, 2010 ? Rev. 8
1
Publication Order Number:
NTD12N10/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD12N10G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD12N10T4 | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD12N10T4G | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD14N03R | 功能描述:MOSFET 25V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD14N03R_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 14 Amps, 25 Volts N-Channel DPAK |
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