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参数资料
| 型号： | NTD23N03R-001 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 3.8A IPAK |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.76nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 225pF @ 20V |
| 功率 - 最大： | 1.14W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD23N03R-001OS |
NTD23N03R
Power MOSFET
23 A, 25 V, N ? Channel DPAK
Features
?
?
?
?
?
?
Planar HD3e Process for Fast Switching Performance
Low R DS(on) to Minimize Conduction Loss
Low C iss to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
High ? Efficiency DC ? DC Converters
Pb ? Free Packages are Available
V (BR)DSS
25 V
http://onsemi.com
R DS(on) TYP
32 m W
N ? CHANNEL
D
I D MAX
23 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
25
± 20
Unit
Vdc
Vdc
G
S
Thermal Resistance, Junction ? to ? Case
Total Power Dissipation @ T C = 25 ° C
Drain Current
? Continuous @ T C = 25 ° C, Chip
? Continuous @ T C = 25 ° C,
Limited by Package
? Single Pulse
Thermal Resistance, Junction ? to ? Ambient
(Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
R q JC
P D
I D
I D
I DM
R q JA
P D
I D
5.6
22.3
23
17.1
40
76
1.64
4.5
° C/W
W
A
A
A
° C/W
W
A
1 2
3
4
DPAK
CASE 369AA
(Surface Mounted)
STYLE 2
MARKING
DIAGRAMS
4
Drain
1
3
Gate
Source
Thermal Resistance, Junction ? to ? Ambient R q JA 110 ° C/W
(Note 2)
Total Power Dissipation @ T A = 25 ° C P D 1.14 W
Drain Current ? Continuous @ T A = 25 ° C I D 3.8 A
Operating and Storage Temperature Range T J , T stg ? 55 to ° C
150
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
1
2
3
4
DPAK ? 3
CASE 369D
(Straight Lead)
STYLE 2
2
Drain
4
Drain
1 2 3
Gate Drain Source
T23N03
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2009
March, 2009 ? Rev. 5
1
Publication Order Number:
NTD23N03R/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD23N03R-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03R-1G | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD23N03RG | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD23N03RT4 | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD23N03RT4G | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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