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| 型号： | NTD24N06-001 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 24A IPAK |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 24A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 42 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 48nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 25V |
| 功率 - 最大： | 1.36W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD24N06-001OS |
NTD24N06
Power MOSFET
60 Volt, 24 Amp
N?Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
http://onsemi.com
circuits.
Features
V (BR)DSS
60 V
R DS(on) TYP
32 m W
I D MAX
24 A
? Pb?Free Packages are Available
N?Channel
Typical Applications
D
?
?
?
?
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain?to?Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain?to?Gate Voltage (R GS = 10 M W )
Gate?to?Source Voltage
? Continuous
? Non?repetitive (t p v 10 ms)
V DGR
V GS
V GS
60
" 20
" 30
Vdc
Vdc
1 2
4
Drain
Drain Current
? Continuous @ T A = 25 ° C, T J = 150 ° C
? Continuous @ T A = 25 ° C, T J = 175 ° C
? Continuous @ T A = 100 ° C, T J = 175 ° C
? Single Pulse (t p v 10 m s), T J = 175 ° C
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
I D
I D
I D
I DM
P D
24
27
19
80
62.5
0.42
1.88
1.36
Adc
Adc
Adc
Apk
W
W/ ° C
W
W
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
4
1
Gate
2
Drain
4
Drain
3
Source
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 10 Vdc,
L = 1.0 mH, I L (pk) = 18 A, V DS = 60 Vdc)
Thermal Resistance
? Junction?to?Case
? Junction?to?Ambient (Note 1)
? Junction?to?Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T J , T stg
E AS
R q JC
R q JA
R q JA
T L
?55 to
+175
162
2.4
80
110
260
° C
mJ
° C/W
° C
1
2
3
DPAK
CASE 369D
(Straight Lead)
STYLE 2
Y
WW
24N06
G
1 2 3
Gate Drain Source
= Year
= Work Week
= Device Code
= Pb?Free Package
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR?4 board using the 0.5 sq in drain pad size.
2. When surface mounted to an FR?4 board using the minimum recommended
pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 4
1
Publication Order Number:
NTD24N06/D
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PDF描述 |
|---|---|
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| NTD2955PT4G | MOSFET P-CH 60V 12A DPAK |
| NTD3055-094G | MOSFET N-CH 60V 12A DPAK |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD24N06-1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 24A I(D) | TO-252AA |
| NTD24N06-1G | 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD24N06G | 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD24N06L | 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD24N06L-001 | 功能描述:MOSFET 24V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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