参数资料
型号: NTD24N06L-001
厂商: ON Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 60V 24A IPAK
产品变化通告: Product Obsolescence 06/Oct/2006
Product Obsolescence 01/Apr/2004
标准包装: 75
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 24A
开态Rds(最大)@ Id, Vgs @ 25° C: 45 毫欧 @ 10A,5V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 32nC @ 5V
输入电容 (Ciss) @ Vds: 1140pF @ 25V
功率 - 最大: 1.36W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: I-Pak
包装: 管件
NTD24N06L, STD24N06L
Power MOSFET
24 Amps, 60 Volts
Logic Level, N ? Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? AEC ? Q101 Qualified and PPAP Capable ? STD24N06L
? These Devices are Pb ? Free and are RoHS Compliant
http://onsemi.com
24 AMPERES, 60 VOLTS
R DS(on) = 0.036 W ( Typ)
N ? Channel
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
G
D
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Drain ? to ? Gate Voltage (R GS = 10 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p v 10 ms)
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
V DGR
V GS
V GS
I D
I D
I DM
P D
T J , T stg
60
" 15
" 20
24
10
72
62.5
0.42
1.88
1.36
? 55 to
+175
Vdc
Vdc
Adc
Apk
W
W/ ° C
W
W
° C
1 2
3
4
4
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
Gate
DPAK
4
Drain
2
Drain
4
Drain
3
Source
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 5.0 Vdc,
L = 1.0 mH, I L (pk) = 18 A, V DS = 60 Vdc)
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
E AS
R q JC
R q JA
R q JA
162
2.4
80
110
mJ
° C/W
1
2
3
CASE 369D
(Straight Lead)
STYLE 2
1 2 3
Gate Drain Source
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 in from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
Y = Year
WW = Work Week
24N6L = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 3
1
Publication Order Number:
NTD24N06L/D
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