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| 型号： | NTD3055L104G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 12A DPAK |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 104 毫欧 @ 6A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 440pF @ 25V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 管件 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTD3055L104G-ND NTD3055L104GOS |
NTD3055L104,
NTDV3055L104
Power MOSFET
12 Amps, 60 Volts, Logic Level
N ? Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
Features
? Lower R DS(on)
? Lower V DS(on)
? Tighter V SD Specification
? Lower Diode Reverse Recovery Time
? Lower Reverse Recovery Stored Charge
? AEC Q101 Qualified ? NTDV3055L104
? These Devices are Pb ? Free and are RoHS Compliant
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
60 V
G
R DS(on) TYP
104 m W
N ? Channel
D
S
I D MAX
12 A
MARKING
DIAGRAMS
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
4
Drain
Drain ? to ? Gate Voltage (R GS = 10 M W )
Gate ? to ? Source Voltage, Continuous
? Non ? Repetitive (t p v 10 ms)
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
V DGR
V GS
V GS
I D
I D
I DM
P D
T J , T stg
60
" 15
" 20
12
10
45
48
0.32
2.1
1.5
? 55 to
+175
Vdc
Vdc
Adc
Apk
W
W/ ° C
W
W
° C
1 2
3
4
4
DPAK
CASE 369C
STYLE 2
DPAK ? 3
CASE 369D
STYLE 2
1
Gate
2
Drain
4
Drain
3
Source
3
Single Pulse Drain ? to ? Source Avalanche E AS 61 mJ
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 5.0 Vdc, L = 1.0 mH
I L(pk) = 11 A, V DS = 60 Vdc)
Thermal Resistance, ? Junction ? to ? Case R q JC 3.13 ° C/W
? Junction ? to ? Ambient (Note 1) R q JA 71.4
? Junction ? to ? Ambient (Note 2) R q JA 100
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 ″ pad size,
(Cu Area 1.127 in 2 ).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in 2 ).
1
2
1 2 3
Gate Drain Source
55L104 = Device Code
Y = Year
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
August, 2011 ? Rev. 8
1
Publication Order Number:
NTD3055L104/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD3055L104G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD3055L104T4 | 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD3055L104T4G | 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD3055L104T4G | 制造商:ON Semiconductor 功能描述:MOSFET 60V 12A D-PAK |
| NTD3055L170 | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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