- 您现在的位置：买卖IC网 > PDF目录18536 > NTD3055L170G (ON Semiconductor)MOSFET N-CH 60V 9A DPAK PDF资料下载
参数资料
| 型号： | NTD3055L170G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 9A DPAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 170 毫欧 @ 4.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 275pF @ 25V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 管件 |
NTD3055L170,
NVD3055L170
Power MOSFET
9.0 A, 60 V, Logic Level, N ? Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These are Pb ? Free Devices
http://onsemi.com
9.0 AMPERES, 60 VOLTS
R DS(on) = 170 m W
N ? Channel
D
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
4
S
DPAK
Rating
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 10 M W )
Symbol
V DSS
V DGR
Value
60
60
Unit
Vdc
Vdc
1 2
3
CASE 369C
(Surface Mounted)
STYLE 2
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p v 10 ms)
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
V GS
V GS
I D
I D
I DM
" 15
" 20
9.0
3.0
27
Vdc
Adc
Apk
1
2
3
4
DPAK ? 3
CASE 369D
(Straight Lead)
STYLE 2
YWW
Drain
3 ? Source
YWW
Drain
3 ? Source
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 5.0 Vdc,
L = 1.0 mH, I L (pk) = 7.75 A, V DS = 60 Vdc)
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
P D
T J , T stg
E AS
R q JC
R q JA
R q JA
28.5
0.19
2.1
1.5
? 55 to
175
30
5.2
71.4
100
W
W/ ° C
W
W
° C
mJ
° C/W
MARKING DIAGRAMS
1 ? Gate
2 ? Drain 31
70LG
1 ? Gate
2 ? Drain 31
70LG
4
4
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommen-
ded Operating Conditions is not implied. Extended exposure to stresses above
the Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
A = Assembly Location
Y = Year
WW = Work Week
3170L = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 5
1
Publication Order Number:
NTD3055L170/D
相关PDF资料 |
PDF描述 |
|---|---|
| P170S-FC15BR100K | POT ROTARY 100K OHM 17MM SW SLDR |
| P110KH-0Y20BR10K | POT ROTARY 10K OHM 11MM |
| 227-1221-3 | TOOL DIE SET FERRULE RG-174/316 |
| NTD3055L170-1G | MOSFET N-CH 60V 9A IPAK |
| ABM3C-12.288MHZ-D4Y-T | CRYSTAL 12.288 MHZ 18PF SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD3055L170T4 | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD3055L170T4G | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD3055L170T4H | 制造商:ON Semiconductor 功能描述: |
| NTD30N02 | 制造商:ON Semiconductor 功能描述:Power MOSFET 30Amps, 24Volts N-Channel DPAK |
| NTD30N02G | 功能描述:MOSFET NFET 24V 0.014R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。