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| 型号： | NTD32N06LG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 32A DPAK |
| 产品变化通告： | Product Discontinuation 09/Jan/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 16A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1700pF @ 25V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 管件 |
NTD32N06L
Power MOSFET
32 Amps, 60 Volts
Logic Level, N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
Features
? Smaller Package than MTB30N06VL
? Lower R DS(on) , V DS(on) , and Total Gate Charge
? Lower and Tighter V SD
? Lower Diode Reverse Recovery Time
? Lower Reverse Recovery Stored Charge
? Pb-Free Packages are Available
V DSS
60 V
R DS(ON) TYP
23.7 m W
N-Channel
D
I D MAX
32 A
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
S
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Rating
Drain-to-Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
4
Drain
Drain-to-Gate Voltage (R GS = 10 M W )
V DGR
60
Vdc
4
DPAK
Gate-to-Source Voltage - Continuous
- Non-Repetitive (t p v 10 ms)
Drain Current - Continuous @ T A = 25 ° C
- Continuous @ T A = 100 ° C
- Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche
Energy - Starting T J = 25 ° C (Note 3)
(V DD = 50 Vdc, V GS = 5 Vdc, L = 1.0 mH,
I L(pk) = 25 A, V DS = 60 Vdc, R G = 25 W )
Thermal Resistance
V GS
V GS
I D
I D
I DM
P D
T J , T stg
E AS
" 20
" 30
32
22
90
93.75
0.625
2.88
1.5
-55 to
+175
313
Vdc
Adc
Apk
W
W/ ° C
W
W
° C
mJ
° C/W
1 2
1
2
3
3
4
CASE 369C
(Surface Mount)
STYLE 2
1
Gate
DPAK
CASE 369D
(Straight Lead)
STYLE 2
2
Drain
4
Drain
3
Source
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
Maximum Lead Temperature for Soldering
R q JC
R q JA
R q JA
T L
1.6
52
100
260
° C
1 2 3
Gate Drain Source
Purposes, 1/8 in from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to FR4 board using 0.5 in pad size.
2. When surface mounted to FR4 board using minimum recommended pad size.
Y
WW
32N06L
G
= Year
= Work Week
= Device Code
= Pb-Free Package
3. Repetitive rating; pulse width limited by maximum junction temperature.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 5
1
Publication Order Number:
NTD32N06L/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD32N06LT4 | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD32N06LT4G | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD32N06T4 | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD32N06T4G | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD35 | 制造商:EDI 制造商全称:Electronic devices inc. 功能描述:HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
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