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| 型号： | NTD4302G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8.4A DPAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2400pF @ 24V |
| 功率 - 最大： | 1.04W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 管件 |
| 其它名称： | NTD4302G-ND NTD4302GOS |
NTD4302
Power MOSFET
68 A, 30 V, N ? Channel DPAK
Features
?
?
?
?
?
?
?
?
Ultra Low R DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I DSS Specified at Elevated Temperature
DPAK Mounting Information Provided
These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
30 V
http://onsemi.com
R DS(on) TYP
7.8 m W @ 10 V
N ? Channel
I D MAX
68 A
Applications
D
? DC ? DC Converters
? Low Voltage Motor Control
? Power Management in Portable and Battery Powered Products:
i.e., Computers, Printers, Cellular and Cordless Telephones,
and PCMCIA Cards
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
G
S
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
Vdc
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ? Junction ? to ? Case
Total Power Dissipation @ T C = 25 ° C
Continuous Drain Current @ T C = 25 ° C (Note 4)
Continuous Drain Current @ T C = 100 ° C
Thermal Resistance ? Junction ? to ? Ambient
(Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 100 ° C
Pulsed Drain Current (Note 3)
V GS
R q JC
P D
I D
I D
R q JA
P D
I D
I D
I DM
± 20
1.65
75
68
43
67
1.87
11.3
7.1
36
Vdc
° C/W
W
A
A
° C/W
W
A
A
A
1 2
3
4
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
Gate
4
Drain
2
Drain
3
Source
Thermal Resistance ? Junction ? to ? Ambient
(Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 100 ° C
Pulsed Drain Current (Note 3)
Operating and Storage Temperature Range
R q JA
P D
I D
I D
I DM
T J , T stg
120
1.04
8.4
5.3
28
? 55 to
150
° C/W
W
A
A
A
° C
4
DPAK
CASE 369D
(Straight Lead)
4
Drain
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 30 Vdc, V GS = 10 Vdc,
Peak I L = 17 Apk, L = 5.0 mH, R G = 25 W )
E AS
722
mJ
1
2
3
STYLE 2
1
2
3
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T L
260
° C
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
3. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
4. Current Limited by Internal Lead Wires.
Y = Year
WW = Work Week
T4302 = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
October, 2010 ? Rev. 8
1
Publication Order Number:
NTD4302/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4302G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD4302T4 | 功能描述:MOSFET 30V 68A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4302T4G | 功能描述:MOSFET 30V 68A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4404N | 制造商:ON Semiconductor 功能描述: 制造商:ON Semiconductor 功能描述:Power MOSFET 85 Amps, 24 Volts N-Channel DPAK 制造商:ON Semiconductor 功能描述:Power MOSFET 85 A,24V N-CH |
| NTD4404N1 | 功能描述:MOSFET NFET 24V 4.7MR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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