参数资料
型号: NTD4809NH-35G
厂商: ON Semiconductor
文件页数: 5/8页
文件大小: 0K
描述: MOSFET N-CH 30V 9A IPAK
标准包装: 75
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 9A
开态Rds(最大)@ Id, Vgs @ 25° C: 9 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 15nC @ 4.5V
输入电容 (Ciss) @ Vds: 2155pF @ 12V
功率 - 最大: 1.3W
安装类型: 通孔
封装/外壳: TO-251-3 短截引线,IPak
供应商设备封装: I-Pak
包装: 管件
NTD4809NH, NVD4809NH
TYPICAL PERFORMANCE CURVES
2000
1500
C iss
T J = 25 ° C
12
10
Q T
V GS
8
1000
6
500
0
0
5
10
C oss
C rss
15
20
25
30
4
2
0
0
Q gs
5
Q gd
V DD = 15 V
0 V ≤ V GS ≤ 11.5 V
I D = 30 A
T J = 25 ° C
10 15 20 25
30
DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? to ? Source Voltage
vs. Total Charge
100
10
t r
t d(off)
30
25
20
15
V GS = 0 V
T J = 25 ° C
t d(on)
10
1
1
t f
10
V DD = 15 V
I D = 30 A
V GS = 11.5 V
100
5
0
0.5
0.6
0.7
0.8
0.9
1.0
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
V GS = 20 V
SINGLE PULSE
T A = 25 ° C
10 m s
100 m s
1 ms
120
100
80
60
40
I D = 15 A
1
0.1
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
10 ms
dc
100
20
0
25
50 75
100 125
150
175
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
5
T J , JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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