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| 型号： | NTD4810NH-35G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8.6A IPAK |
| 产品变化通告： | Product Discontinuation 04/April/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1225pF @ 12V |
| 功率 - 最大： | 1.28W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短截引线，IPak |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD4810NH
Power MOSFET
30 V, 54 A, Single N--Channel, DPAK/IPAK
Features
?
?
?
?
?
Low R DS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low R G
These are Pb--Free Devices
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
10 m Ω @ 10 V
16.7 m Ω @ 4.5 V
I D MAX
54 A
Applications
? CPU Power Delivery
? DC--DC Converters
D
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
G
N--Channel
Drain--to--Source Voltage
Gate--to--Source Voltage
V DSS
V GS
30
? 20
V
V
S
Continuous Drain
Current (R θ JA ) (Note 1)
T A = 25 ° C
T A = 85 ° C
I D
10.8
8.4
A
4
4
4
1
2 3
3
Power Dissipation
(R θ JA ) (Note 1)
Continuous Drain
Current (R θ JA ) (Note 2)
Power Dissipation
(R θ JA ) (Note 2)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
P D
I D
P D
2.0
8.6
6.7
1.28
W
A
W
1 2
3
DPAK
CASE 369AA
(Bent Lead)
1
2
3 IPAK IPAK
CASE 369AC CASE 369D
(Straight Lead) (Straight Lead
Continuous Drain
Current (R θ JC )
(Note 1)
T C = 25 ° C
T C = 85 ° C
I D
54
42
A
STYLE 2
MARKING DIAGRAMS
DPAK)
4
Power Dissipation
(R θ JC ) (Note 1)
Pulsed Drain Current t p =10 m s
Current Limited by Package
T C = 25 ° C
T A = 25 ° C
T A = 25 ° C
P D
I DM
I DmaxPkg
50
120
45
W
A
A
4
Drain
& PIN ASSIGNMENTS
4
Drain
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
-- 55 to
175
41
° C
A
1
2
3
Source Gate Drain Source
1
2
3
Drain to Source dV/dt
Single Pulse Drain--to--Source Avalanche
Energy (V DD = 24 V, V GS = 10 V,
L = 0.3 mH, I L(pk) = 21 A, R G = 25 Ω )
dV/dt
E AS
6.0
66
V/ns
mJ
2
1 Drain 3
Gate
Gate Drain Source
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
Y
WW
= Year
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
4810NH = Device Code
G = Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 3
1
Publication Order Number:
NTD4810NH/D
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