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| 型号： | NTD4904NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 13A SGL DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.7 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 41nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3052pF @ 15V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | NTD4904NT4GOSDKR |
NTD4904N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Tab (Drain)
Junction ? to ? Ambient ? Steady State (Note 1)
Junction ? to ? Ambient ? Steady State (Note 2)
Symbol
R q JC
R q JC ? TAB
R q JA
R q JA
Value
2.9
4.3
57
108
Unit
° C/W
1. Surface ? mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
15
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
1.0
1.6
2.2
V
Negative Threshold Temperature
Coefficient
V GS(TH) /T J
4.0
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
I D = 30 A
3.0
3.7
m W
I D = 15 A
3.0
V GS = 4.5 V
I D = 30 A
I D = 15 A
4.0
4.0
5.5
Forward Transconductance
gFS
V DS = 1.5 V, I D = 30 A
76
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
C iss
C oss
C rss
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
V GS = 4.5 V, V DS = 15 V,
I D = 30 A
V GS = 10 V, V DS = 15 V,
I D = 30 A
3052
976
23
16.8
4.4
8.2
3.0
41
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
15.3
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
19.8
23.4
7.5
Turn ? On Delay Time
t d(on)
10.3
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
20
28.7
8.0
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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