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| 型号： | NTD4970NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 38A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 774pF @ 15V |
| 功率 - 最大： | 1.38W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD4970N
Power MOSFET
30 V, 36 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Three Package Variations for Design Flexibility
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
11 m W @ 10 V
21 m W @ 4.5 V
D
I D MAX
36 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G
Continuous Drain
Current R q JA
(Note 1)
T A = 25 ° C
T A = 100 ° C
I D
11.6
8.2
A
S
N ? CHANNEL MOSFET
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
P D
2.55
W
4
4
1
2 3
3
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Steady
State
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
I D
P D
I D
P D
8.5
6.0
1.38
36
25
24.6
A
W
A
W
4
1 2
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1
2
CASE 369AC CASE 369D
3 IPAK IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Pulsed Drain t p =10 m s
Current
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
T A = 25 ° C
T A = 25 ° C
I DM
I DmaxPkg
T J ,
T STG
I S
130
38
? 55 to
+175
22
A
A
° C
A
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain
Drain to Source dV/dt
dV/dt
6.0
V/ns
1
2
3
Source Gate Drain Source
1
2
3
Single Pulse Drain ? to ? Source Avalanche EAS 11 mJ
Energy (T J = 25 ° C, V DD = 24 V, V GS = 10 V,
I L = 15 A pk , L = 0.1 mH, R G = 25 W)
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
2
1 Drain 3
Gate
Gate Drain Source
Y = Year
WW = Work Week
4970N = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
June, 2011 ? Rev. 0
1
Publication Order Number:
NTD4970N/D
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