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| 型号： | NTD5406NG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 70A DPAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 70A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2500pF @ 32V |
| 功率 - 最大： | 100W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 管件 |
NTD5406N, STD5406N
Power MOSFET
40 V, 70 A, Single N ? Channel, DPAK
Features
? Low R DS(on)
? High Current Capability
? Low Gate Charge
? AEC ? Q101 Qualified and PPAP Capable ? STD5406N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Electronic Brake Systems
? Electronic Power Steering
? Bridge Circuits
V (BR)DSS
40 V
http://onsemi.com
R DS(ON) TYP
8.7 m Ω @ 10 V
N ? Channel
D
I D MAX
(Note 1)
70 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
40
± 20
Unit
V
V
G
S
Continuous Drain
Current ? R q JC
Power Dissipation ?
R q JC
Continuous Drain
Current ? R q JA
(Note 1)
Power Dissipation ?
R q JA (Note 1)
Steady
State
Steady
State
Steady
State
Steady
State
T C = 25 ° C
T C = 125 ° C
T C = 25 ° C
T A = 25 ° C
T A = 125 ° C
T A = 25 ° C
I D
P D
I D
P D
70
40
100
12.2
7.0
3.0
A
W
A
W
4
1 2
3
DPAK
CASE 369C
STYLE 2
1
MARKING
DIAGRAM
YWW
54
06NG
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
I DM
T J ,
T STG
I S
150
? 55 to
175
63.5
A
° C
A
Y
WW
5406N
G
= Year
= Work Week
= Specific Device Code
= Pb ? Free Device
Single Pulse Drain ? to Source Avalanche
Energy ? (V DD = 50 V, V GS = 10 V, I PK = 30 A,
L = 1 mH, R G = 25 W )
EAS
450
mJ
ORDERING INFORMATION
Device Package Shipping ?
T L
Lead Temperature for Soldering Purposes 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS (Note 1)
NTD5406NT4G DPAK 2500 / Tape & Reel
(Pb ? Free)
STD5406NT4G DPAK 2500 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Ambient (Note 1)
Symbol
R θ JC
R θ JA
Max
1.5
49
Unit
° C/W
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 6
1
Publication Order Number:
NTD5406N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD5406NT4G | 功能描述:MOSFET NFET 40V HD3E RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5407N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 38 A, Single N−Channel, DPAK |
| NTD5407NG | 功能描述:MOSFET NFET 40V 38A PB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5407NT4G | 功能描述:MOSFET NFET 40V 38A PB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5413N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 Amps, 60 Volts Single N−Channel DPAK |
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