- 您现在的位置：买卖IC网 > PDF目录18035 > NTD5865NT4G (ON Semiconductor)MOSFET N-CH 60V 34A 18MOHM DPAK PDF资料下载
参数资料
| 型号： | NTD5865NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 34A 18MOHM DPAK |
| 产品变化通告： | Reactivation Notice 08/Apr/2011 Product Obsolescence 24/Jan/2011 |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 38A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1261pF @ 25V |
| 功率 - 最大： | 52W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | NTD5865NT4GOSDKR |
NTD5865N
N-Channel Power MOSFET
60 V, 43 A, 18 m W
Features
? Low Gate Charge
? Fast Switching
? High Current Capability
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
18 m W @ 10 V
I D MAX
43 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Gate ? to ? Source Voltage
? Non ? Repetitive (t p < 10 m s)
Symbol
V DSS
V GS
V GS
Value
60
" 20
" 30
Unit
V
V
V
G
D
Current (R q JC )
Power Dissipation
T C = 25 ° C
Continuous Drain T C = 25 ° C
Steady T C = 100 ° C
State
(R q JC )
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I D
P D
I DM
T J , T stg
43
31
71
192
? 55 to
175
A
W
A
° C
S
N ? CHANNEL MOSFET
4
4
3
Source Current (Body Diode)
Single Pulse Drain ? to ? Source L = 0.1 mH
Avalanche Energy
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
E AS
I AS
T L
43
36
27
260
A
mJ
A
° C
1 2
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
2
IPAK
CASE 369D
(Straight Lead)
STYLE 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
4 Drain
Drain
Junction ? to ? Case (Drain)
R q JC
2.1
° C/W
Junction ? to ? Ambient ? Steady State (Note 1) R q JA 49
1. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Y
WW
5865N
G
= Year
= Work Week
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 2
1
Publication Order Number:
NTD5865N/D
相关PDF资料 |
PDF描述 |
|---|---|
| AWSCR-6.00MGD-T | RESONATOR CER 6.00MHZ W/CAP SMD |
| F1399AA10 | FILTER POWER LINE EMI 10A FASTON |
| CD15FC681FO3F | CAP MICA 680PF 300V 1% RADIAL |
| SS12SDH2LE | SW SLIDE SPDT YLW ILLUM 0.1A PCB |
| A123S3YZQ | SWITCH TOGGLE SPDT SOLDER LUG |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD5867NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 60 V, 20 A, 39 m |
| NTD5867NL-1G | 功能描述:MOSFET NFET DPAK 60V 18A 43 MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5867NLT4G | 功能描述:MOSFET NFET DPAK 60V 18A 43 MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD5N50 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: 制造商:MOTOROLA 功能描述: |
| NTD5N50/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 5 Amps， 500 Volts |
发布紧急采购，3分钟左右您将得到回复。