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参数资料
| 型号： | NTD6415ANT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 23A DPAK |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 23A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 23A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 700pF @ 25V |
| 功率 - 最大： | 83W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | NTD6415ANT4GOSDKR |
NTD6415AN, NVD6415AN
N-Channel Power MOSFET
100 V, 23 A, 55 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? AEC Q101 Qualified ? NVD6415AN
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
100 V
http://onsemi.com
R DS(on) MAX
55 m W @ 10 V
I D MAX
(Note 1)
23 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Continuous Drain Steady T C = 25 ° C
Current R q JC State
T C = 100 ° C
V DSS
V GS
I D
100
$ 20
23
16
V
V
A
N ? Channel
D
Power Dissipation
R q JC
Steady
State
T C = 25 ° C
P D
83
W
G
Pulsed Drain Current
t p = 10 m s
I DM
89
A
Operating and Storage Temperature Range
Source Current (Body Diode)
T J , T stg
I S
? 55 to
+175
23
° C
A
S
4
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc, I L(pk) =
23 A, L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
Parameter
E AS
T L
Symbol
79
260
Max
mJ
° C
Unit
4
1 2
3
DPAK
CASE 369AA
STYLE 2
1
2
3
IPAK
CASE 369D
STYLE 2
Junction ? to ? Case (Drain) Steady State R q JC 1.8 ° C/W
Junction ? to ? Ambient (Note 1) R q JA 39
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain 4 Drain
1
Gate
2
Drain
3
Source
1
Gate
2
3
Source
6415AN
Y
WW
G
= Device Code
= Year
= Work Week
= Pb ? Free Package
Drain
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 1
1
Publication Order Number:
NTD6415AN/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTD6416AN-1G | MOSFET N-CH 100V 17A IPAK |
| NTD6416ANL-1G | MOSFET N-CH 100V 19A DPAK |
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| NTD6600N-1G | MOSFET N-CH 100V 12A IPAK |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD6416AN | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 17 A, 81 m |
| NTD6416AN-1G | 功能描述:MOSFET NFET IPAK 100V 15A 86MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD6416ANL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 19 A, 74 mΩ |
| NTD6416ANL-1G | 功能描述:MOSFET NFET DPAK 100V 15A 86MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD6416ANLT4G | 功能描述:MOSFET NFET DPAK 100V 17A 106MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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