- 您现在的位置：买卖IC网 > PDF目录18531 > NTD65N03R-001 (ON Semiconductor)MOSFET N-CH 25V 9.5A IPAK PDF资料下载
参数资料
| 型号： | NTD65N03R-001 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 9.5A IPAK |
| 产品变化通告： | LTB Notification |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.4 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1400pF @ 20V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD65N03R
Power MOSFET
25 V, 65 A, Single N?Channel, DPAK
Features
? Low R DS(on)
? Ultra Low Gate Charge
? Low Reverse Recovery Charge
? Pb?Free Packages are Available
Applications
? Desktop CPU Power
? DC?DC Converters
? High and Low Side Switch
V (BR)DSS
25 V
http://onsemi.com
R DS(on) TYP
6.5 m W @ 10 V
9.7 m W @ 4.5 V
N?Channel
I D MAX
65 A
D
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain?to?Source Voltage
Gate?to?Source Voltage
V DSS
V GS
25
" 20
V
V
G
Continuous Drain
Current (R q JC ) Limited
by Die
T C = 25 ° C
T C = 85 ° C
I D
65
45
A
S
Continuous Drain
Current (R q JC ) Limited
by Wire
Power Dissipation
(R q JC )
Continuous Drain
Current (Note 1)
Power Dissipation
Steady
State
Steady
State
T C = 25 ° C
T C = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
I D
P D
32
50
11.4
8.9
1.88
A
W
A
W
4
1 2
3
CASE 369AA
DPAK
(Bend Lead)
4
1
2
3
CASE 369D
DPAK
(Straight Lead)
4
1
2 3
CASE 369AC
3 IPAK
(Straight Lead)
(Note 1)
STYLE 2
STYLE 2
Continuous Drain
T A = 25 ° C
I D
9.5
A
Current (Note 2)
Power Dissipation
Steady
State
T A = 85 ° C
T A = 25 ° C
P D
7.4
1.3
W
MARKING DIAGRAMS
& PIN ASSIGNMENTS
(Note 2)
Pulsed Drain Current
t p = 10 m s
I DM
130
A
4
Drain
Operating Junction and Storage
Temperature
Drain?to?Source (dv/dt)
Source Current (Body Diode)
Single Pulse Drain?to?Source Avalanche
T J , T stg
dv/dt
I S
E AS
?55 to
175
2.0
2.1
71.7
° C
V/ns
A
mJ
4
Drain
Energy (V DD = 24 V, V GS = 10 V, I L = 12 A,
L = 1.0 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
1
Gate
2
Drain
3
Source
1
Gate
2
Drain
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface?mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Y
WW
65N03
G
= Year
= Work Week
= Device Code
= Pb?Free Package
2. Surface?mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.15 in sq) [1 oz] including traces.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
July, 2006 ? Rev. 3
1
Publication Order Number:
NTD65N03R/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTD65N03R | MOSFET N-CH 25V 9.5A DPAK |
| NTD60N02RG | MOSFET N-CH 25V 8.5A DPAK |
| NTD60N02R-35G | MOSFET N-CH 25V 8.5A IPAK |
| 252A154B50TB | POT JOYSTICK 150K OHM W/SWITCH |
| ASA-6.000MHZ-L-T | OSC 6.000 MHZ 3.3V SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD65N03R-035 | 功能描述:MOSFET 25V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD65N03R-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 65 A, Single N-Channel, DPAK |
| NTD65N03R-1G | 功能描述:MOSFET 25V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD65N03R-35 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 65 A, Single N-Channel, DPAK |
| NTD65N03R-35G | 功能描述:MOSFET 25V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。