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| 型号： | NTD6600N-001 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 12A IPAK |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 146 毫欧 @ 6A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 700pF @ 25V |
| 功率 - 最大： | 1.28W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD6600N
Power MOSFET
100 V, 12 A, N?Channel,
Logic Level DPAK
Features
? Source?to?Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
? Avalanche Energy Specified
? Logic Level
? Pb?Free Packages are Available
Typical Applications
? PWM Motor Controls
? Power Supplies
? Converters
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
V (BR)DSS
100 V
G
http://onsemi.com
R DS(on) TYP
118 m W @ 5.0 V
N?Channel
D
I D MAX
12 A
Rating
Symbol
Value
Unit
Drain?to?Source Voltage
Drain?to?Source Voltage (R GS = 1.0 M W )
V DSS
V DGR
100
100
Vdc
Vdc
S
MARKING
Gate?to?Source Voltage
? Continuous
Drain Current ? Continuous @ T A = 25 ° C
Drain Current ? Continuous @ T A =100 ° C
Drain Current ? Pulsed (Note 3)
V GS
I D
I D
I DM
± 20
12
9.0
44
Vdc
Adc
Apk
4
DPAK
CASE 369C
DIAGRAMS
4
Drain
Total Power Dissipation
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
P D
T J , T stg
56.6
0.38
1.76
1.28
?55 to
W
W/ ° C
W
W
° C
1 2
3
(Surface Mounted)
STYLE 2
1
Gate
2
Drain
3
Source
+175
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 5.0 Vdc,
I L = 12 Apk, L = 1.0 mH, R G = 25 W )
Thermal Resistance
E AS
72
mJ
° C/W
4
DPAK?3
CASE 369D
(Straight Lead)
4
Drain
? Junction?to?Case
? Junction?to?Ambient (Note 1)
? Junction?to?Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, (1/8 ″ from case for 10 s)
R q JC
R q JA
R q JA
T L
2.65
85
117
260
° C
1
2
3
STYLE 2
1 2 3
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
Y
WW
NT6600
G
= Year
= Work Week
= Device Code
= Pb?Free Package
pad size.
3. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
March, 2007 ? Rev. 4
1
Publication Order Number:
NTD6600N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD6600N-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK |
| NTD6600N-1G | 功能描述:MOSFET N-CH 100V 12A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTD6600NT4 | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD6600NT4G | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD6N40 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 400V 6A 3-Pin(2+Tab) DPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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