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| 型号： | NTD70N03R-001 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 10A IPAK |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13.2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1333pF @ 20V |
| 功率 - 最大： | 1.36W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD70N03R-001OS |
NTD70N03R
Power MOSFET
72 A, 25 V, N-Channel DPAK
Features
?
?
?
?
?
Planar HD3e Process for Fast Switching Performance
Low R DS(on) to Minimize Conduction Loss
Low C ISS to Minimize Driver Loss
Low Gate Charge
Pb-Free Packages are Available
V (BR)DSS
25 V
http://onsemi.com
R DS(on) TYP
5.6 m W
I D MAX
72 A
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
N-Channel
D
Parameter
Drain-to-Source Voltage
Symbol
V DSS
Value
25
Unit
V dc
Gate-to-Source Voltage - Continuous
Thermal Resistance - Junction-to-Case
Total Power Dissipation @ T C = 25 ° C
Drain Current
- Continuous @ T C = 25 ° C, Chip
- Continuous @ T C = 25 ° C, Limited by Package
- Continuous @ T A = 25 ° C, Limited by Wires
- Single Pulse (t p = 10 m s)
V GS
R q JC
P D
I D
I D
I D
I DM
± 20
2.4
62.5
72.0
62.8
32
140
V dc
° C/W
W
A
A
A
A
G
S
MARKING DIAGRAMS
Thermal Resistance - Junction-to-Ambient
(Note1)
Total Power Dissipation @ T A = 25 ° C
Drain Current - Continuous @ T A = 25 ° C
Thermal Resistance - Junction-to-Ambient
(Note2)
Total Power Dissipation @ T A = 25 ° C
Drain Current - Continuous @ T A = 25 ° C
Operating and Storage Temperature Range
R q JA
P D
I D
R q JA
P D
I D
T J , T stg
80
1.87
12.0
110
1.36
10.0
-55 to
° C/W
W
A
° C/W
W
A
° C
4
1 2
3
DPAK
CASE 369AA
STYLE 2
1
Gate
4
Drain
2
Drain
3
Source
175
Single Pulse Drain-to-Source Avalanche
Energy - Starting T J = 25 ° C
E AS
71.7
mJ
4
4
Drain
(V DD = 30 V dc , V GS = 10 V dc , I L = 12 A pk ,
L = 1 mH, R G = 25 W )
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from Case for 10 s
Stresses exceeding Maximum Ratings may damage the device. Maximum
1
2
3
Ratings are stress ratings only. Functional operation above the Recommended
DPAK
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
CASE 369D
STYLE 2
70N03
Y
WW
G
1 2 3
Gate Drain Source
= Device Code
= Year
= Work Week
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 10
1
Publication Order Number:
NTD70N03R/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD70N03R-1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD70N03R-1G | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD70N03RG | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD70N03RT4 | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD70N03RT4G | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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